公开(公告)号：US20210083069A1

公开(公告)日：2021-03-18

申请号：US16806146

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L29/51 ,  H01L21/28 ,  H01L27/11563

Abstract: According to one embodiment, a semiconductor device includes a substrate, a plurality of insulating films and a plurality of electrode films provided alternately on the substrate. The semiconductor device further includes a first insulating film, a first charge storage film, a third insulating film, a second charge storage film, a second insulating film, and a first semiconductor film that are sequentially provided along at least one side surface of each of the electrode films. The first charge storage film includes either (i) molybdenum, or (ii) titanium and nitrogen, and the second charge storage film includes a semiconductor film.

公开(公告)号：US20240268117A1

公开(公告)日：2024-08-08

申请号：US18431532

申请日：2024-02-02

Applicant: Kioxia Corporation

Inventor： Mitsuo IKEDA ,  Daisuke IKENO ,  Ryosuke UMINO

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/30 ,  H10B43/30

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/30 ,  H10B43/30

Abstract: A semiconductor device includes: a film stack including a plurality of electrode layers and a plurality of first insulating films alternately stacked on top of one another; a charge storage layer provided between a side face of the electrode layers through a second insulating film; and a semiconductor layer provided between a side face of the charge storage layer through a third insulating film. At least one of the plurality of electrode layers includes a first layer and a second layer. The first layer is a polycrystalline layer including tungsten and nitrogen. The second layer is an amorphous layer including tungsten.

公开(公告)号：US20230046783A1

公开(公告)日：2023-02-16

申请号：US17550062

申请日：2021-12-14

Applicant: Kioxia Corporation

Inventor： Hiroki KITAYAMA ,  Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.

公开(公告)号：US20230413555A1

公开(公告)日：2023-12-21

申请号：US18177734

申请日：2023-03-02

Applicant: Kioxia Corporation

Inventor： Hiroki KITAYAMA ,  Tomotaka ARIGA ,  Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.

公开(公告)号：US20230092843A1

公开(公告)日：2023-03-23

申请号：US17681357

申请日：2022-02-25

Applicant: KIOXIA CORPORATION

Inventor： Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L27/11582

Abstract: According to one embodiment, a semiconductor device includes a tunnel insulating film, a charge trap film on the tunnel insulating film, and a block insulating film on the charge trap film. The charge trap film is between the tunnel insulating film and the block insulating film. A conductive film is on the block insulating film. The block insulating film is between the charge trap film and the conductive film. The conductive film includes a first metal film adjacent to the block insulating film and a second metal film on the first metal film. The first metal film is between the block insulating film and the second metal film. The first metal film has an interfacial roughness on a side facing the second metal film that is greater than an interfacial roughness on a side facing the block insulating film.

公开(公告)号：US20210296238A1

公开(公告)日：2021-09-23

申请号：US17121899

申请日：2020-12-15

Applicant: Kioxia Corporation

Inventor： Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L23/535 ,  H01L29/45 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semiconductor substrate and including titanium (Ti) and silicon (Si); an insulating layer surrounding the conductor; and a second film provided between the conductor and the insulating layer, surrounding the conductor, and including titanium (Ti) and nitrogen (N). A first distance between the semiconductor substrate and an end portion of the second film on a side opposite to the semiconductor substrate is smaller than a second distance between the semiconductor substrate and an end portion of the conductor on a side opposite to the semiconductor substrate.