公开(公告)号：US20250107088A1

公开(公告)日：2025-03-27

申请号：US18884563

申请日：2024-09-13

Applicant: Kioxia Corporation

Inventor： Junpei HASHIMOTO ,  Takuro URAYAMA ,  Daigo ICHINOSE ,  Akiko NOMACHI

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor memory device includes finger structures arranged in a first direction. The finger structures include a first structure and a second structure different in position in a stacking direction. The first structure and the second structure include insulating member rows including insulating members. Among the insulating member rows in the first structure and the second structure of a first finger structure, one closet to a second finger structure includes a first insulating member and a second insulating member. Among the insulating member rows in the first structure and the second structure of the second finger structure, one closet to the first finger structure includes a third insulating member and a fourth insulating member. A distance in the first direction between the first insulating member and the third insulating member is smaller than a distance in the first direction between the second insulating member and the fourth insulating member.