公开(公告)号：US20230086773A1

公开(公告)日：2023-03-23

申请号：US17693617

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Akira YOTSUMOTO ,  Keisuke SUDA ,  Kenji TASHIRO ,  Tetsuya YAMASHITA ,  Daigo ICHINOSE

IPC: H01L27/11565 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor memory device includes: a stacked body having a stacked structure in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one, the stacked body including a memory region and a dummy region arranged in a first direction intersecting a stacking direction of the plurality of conductive layers, the dummy region including a first stepped portion in which at least a part of the plurality of conductive layers on an upper layer side is processed in a stepped shape and terminates at an end portion opposite to the memory region in the first direction; and first and second plate-like portions extending in the stacking direction and the first direction in the stacked body at positions in the memory region away from each other in a second direction intersecting the stacking direction and the first direction, the first and second plate-like portions being directly or indirectly connected to each other and terminating in the dummy region, each of the first and second plate-like portions dividing the stacked body excluding at least a part of the end portion of the dummy region in the second direction.

公开(公告)号：US20230072833A1

公开(公告)日：2023-03-09

申请号：US17578803

申请日：2022-01-19

Applicant: Kioxia Corporation

Inventor： Hiroki MITO ,  Daigo ICHINOSE

IPC: G11C5/06 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11551 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11578 ,  H01L23/528

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a lower interconnect, a source line, word lines, a pillar, a pattern portion, a contact. The source line is provided in a first layer above the lower interconnect. The pattern portion is provided to be separated and insulated from the source line in the first layer. A contact is extending in a first direction, penetrating the pattern portion, and provided on the lower interconnect. A width of the contact in a second direction parallel to a surface of the substrate differs between a portion above a boundary plane that is included in the first layer and is parallel to the surface of the substrate, and a portion below the boundary plane.

公开(公告)号：US20220068803A1

公开(公告)日：2022-03-03

申请号：US17179875

申请日：2021-02-19

Applicant: Kioxia Corporation

Inventor： Daigo ICHINOSE

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor storage device includes a stacked body where first layers of a first insulating material, and second layers are stacked alternately, and plate-like portions penetrating through the stacked body in a stacking direction thereof and extending in a first direction intersecting the stacking direction. Each second layer includes a first insulating area and an electrically conductive area, the former extending from a first edge portion of the stacked body in the first direction thereby occupying at least an area between a first edge portion of each plate-like portions and the first edge portion of the stacked body, and the latter being connected to the first insulating area in the first direction. A boundary between the first insulating area and the electrically conductive area is located farther from the first edge portion of plate-like portions along the first direction with respect to the first edge portion of the stacked body.

公开(公告)号：US20210296357A1

公开(公告)日：2021-09-23

申请号：US17020418

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Daigo ICHINOSE

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L23/522

Abstract: A semiconductor memory device comprises: a plurality of first conductive layers arranged separated from each other in a first direction; a plurality of second conductive layers arranged, electrically insulated from the plurality of first conductive layers, at a different position in a second direction intersecting the first direction with respect to the first conductive layers; a plurality of memory structures; and a source structure. Respective one ends of the plurality of memory structures and one end of the source structure are electrically connected. The respective other ends of the plurality of memory structures are respectively electrically connected to different first wirings of a plurality of first wirings formed in the same layer in the first direction. The other end of the source structure is electrically connected to a second wiring formed in a different layer from the plurality of first wirings in the first direction.

公开(公告)号：US20210288060A1

公开(公告)日：2021-09-16

申请号：US17014733

申请日：2020-09-08

Applicant: Kioxia Corporation

Inventor： Ayaha HACHISUGA ,  Daigo ICHINOSE

IPC: H01L27/11573 ,  H01L27/11578

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first conductive layer. The first structure has a first width at a bottom of the stacked body, and a second width narrower than the first width, in a first depth region from a position of the upper surface of the first conductive layer to a first depth position. A third conductive layer is connected to a side surface of the first conductive layer in the first depth region in a second direction orthogonal to the stacking direction and the first direction.

公开(公告)号：US20250107088A1

公开(公告)日：2025-03-27

申请号：US18884563

申请日：2024-09-13

Applicant: Kioxia Corporation

Inventor： Junpei HASHIMOTO ,  Takuro URAYAMA ,  Daigo ICHINOSE ,  Akiko NOMACHI

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor memory device includes finger structures arranged in a first direction. The finger structures include a first structure and a second structure different in position in a stacking direction. The first structure and the second structure include insulating member rows including insulating members. Among the insulating member rows in the first structure and the second structure of a first finger structure, one closet to a second finger structure includes a first insulating member and a second insulating member. Among the insulating member rows in the first structure and the second structure of the second finger structure, one closet to the first finger structure includes a third insulating member and a fourth insulating member. A distance in the first direction between the first insulating member and the third insulating member is smaller than a distance in the first direction between the second insulating member and the fourth insulating member.

公开(公告)号：US20220208786A1

公开(公告)日：2022-06-30

申请号：US17409900

申请日：2021-08-24

Applicant: Kioxia Corporation

Inventor： Daigo ICHINOSE

IPC: H01L27/11582

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body, a columnar body, a conductive member, a plate-like portion, and a dividing portion. In the stacked body, a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one, and a stepped portion including the conductive layers is formed to be faced to an end in a first direction. The columnar body penetrates the stacked body, and includes a memory cell formed in a portion facing the conductive layer. The conductive member is electrically connected to the columnar body below the stacked body, and extends to a region laterally below the stacked body beyond the stepped portion in the first direction. The plate-like portion extends in a stacking direction of the stacked body in a lateral region of the stacked body to reach the conductive member, and extends in a second direction intersecting the first direction. The dividing portion is disposed in the conductive member on the stepped portion side with respect to the plate-like portion, partially divides the conductive member, and includes an insulating material.