公开(公告)号：US20210057376A1

公开(公告)日：2021-02-25

申请号：US16816571

申请日：2020-03-12

Applicant: Kioxia Corporation

Inventor： Kazuhiro NAKANISHI ,  Shigehiro YAMAKITA ,  Kazuhiro NOJIMA ,  Kenichi KADOTA

IPC: H01L23/00

Abstract: In one embodiment, a semiconductor device includes a substrate, a lower pad provided above the substrate, and an upper pad provided on the lower pad. The lower pad includes a first pad and a plurality of first connection portions provided on the first pad, and the upper pad is provided on the plurality of first connection portions, or the upper pad includes a second pad and a plurality of second connection portions provided under the second pad, and the lower pad is provided under the plurality of second connection portions.

公开(公告)号：US20210288061A1

公开(公告)日：2021-09-16

申请号：US17013229

申请日：2020-09-04

Applicant: Kioxia Corporation

Inventor： Kenichi KADOTA

IPC: H01L27/11575 ,  H01L27/11565 ,  H01L27/11582 ,  H01L23/535 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body that includes a plurality of first conductive layers stacked with a first insulating layer interposed therebetween and has a stair portion and a memory portion; and a first structure that extends in the stacked body in a predetermined direction and divides the stacked body, the first structure including a projection extending in the stacking direction across the plurality of first conductive layers, on a side surface thereof in the stair portion wherein the first structure includes: a second insulating layer that is provided in the projection; and a third insulating layer that covers end surfaces of the plurality of first conductive layers and the first insulating layer facing toward the first structure and continuously extends in the first structure over the memory portion and the stair portion.