公开(公告)号：US20230051382A1

公开(公告)日：2023-02-16

申请号：US17547567

申请日：2021-12-10

Applicant: Kioxia Corporation

Inventor： Koichi YAMAMOTO

IPC: H01L23/535 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: A semiconductor memory device according to an embodiment includes: a stacked body in which a plurality of first conductive layers and a plurality of first insulating layers are alternately stacked one by one and includes a stepped portion in which, a first pillar disposed in the stepped portion, the first pillar extending in a stacking direction of the stacked body; and a second pillar extending in the stacking direction within the stacked body, the second pillar forming a memory cell at each intersection with at least a part of the plurality of first conductive layers. The first pillar has a semiconductor layer or a second conductive layer extending in the stacking direction and serving as a core material of the first pillar, and a second insulating layer covering a side wall of the semiconductor layer or the second conductive layer and serving as a liner layer of the first pillar.

公开(公告)号：US20240431106A1

公开(公告)日：2024-12-26

申请号：US18749751

申请日：2024-06-21

Applicant: Kioxia Corporation

Inventor： Koichi YAMAMOTO

IPC: H10B43/27

Abstract: A semiconductor storage device includes a stacked body in which a plurality of conductive layers are stacked one layer apart from each other and which has a staircase portion in which the plurality of conductive layers have been processed into a staircase shape, a first pillar that extends in a stacking direction of the stacked body in a portion of the stacked body different from the staircase portion and forms memory cells at each intersection between the first pillar and at least a part of the plurality of conductive layers, a plurality of second pillars that are arranged with periodicity in the staircase portion and extend in the stacking direction within the stacked body, and a contact having a diameter larger than a distance between the plurality of second pillars, that is disposed in the staircase portion and that is electrically connected to one of the plurality of conductive layers.

公开(公告)号：US20210296339A1

公开(公告)日：2021-09-23

申请号：US17118932

申请日：2020-12-11

Applicant: Kioxia Corporation

Inventor： Koichi YAMAMOTO

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  G11C5/02 ,  H01L21/768 ,  H01L23/522

Abstract: A semiconductor storage device according to one embodiment includes a stacked body, a pillar, a contact, and a region. In the stacked body, a plurality of electrically conductive layers and a plurality of insulating layers are stacked alternately one on another. The stacked body includes a stair portion in which end portions of the plurality of electrically conductive layers are stair-shaped. The contact is arranged in the stair portion, and connected at a side surface thereof to an nth (where n is an integer of 2 or larger) electrically conductive layer from the lowermost electrically conductive layer. The region is buried within an (n−1)th electrically conductive layer from the lowermost electrically conductive layer. The region includes an electrically conductive member located below the contact, and an insulating member surrounding the electrically conductive member, so that the region is electrically isolated from the (n−1)th electrically conductive layer that surrounds the region.