公开(公告)号：US20210296400A1

公开(公告)日：2021-09-23

申请号：US17125126

申请日：2020-12-17

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Yukihiro NOMURA ,  Kazuhiko YAMAMOTO ,  Koji USUDA

IPC: H01L27/24 ,  H01L45/00

Abstract: A memory device of an embodiment includes: a first conductive layer; a second conductive layer; a resistance change region provided between the first conductive layer and the second conductive layer; a first region provided between the resistance change region and the first conductive layer, the first region including a first element selected from the group consisting of niobium, vanadium, tantalum, and titanium, and a second element selected from the group consisting of oxygen, sulfur, selenium, and tellurium, the first region having a first atomic ratio of the first element to the second element; and a second region provided between the first region and the resistance change region, the second region including the first element and the second element, the second region having a second atomic ratio of the first element to the second element, the second atomic ratio being smaller than the first atomic ratio.

公开(公告)号：US20230086074A1

公开(公告)日：2023-03-23

申请号：US17694098

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Koji USUDA ,  Masaki NOGUCHI

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a gate electrode layer, and a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer including aluminum oxide including at least one crystal phase selected from the group consisting of alpha (α)-aluminum oxide and theta (θ)-aluminum oxide, the first insulating layer having a thickness of equal to or less than 2.5 nm in a first direction from the semiconductor layer toward the gate electrode layer.