公开(公告)号：US20230402395A1

公开(公告)日：2023-12-14

申请号：US18331519

申请日：2023-06-08

Applicant: Kioxia Corporation

Inventor： Kotaro NODA ,  Kyoko NODA ,  Shosuke FUJII ,  Yusuke ARAYASHIKI ,  Hiroyuki ODE

IPC: H01L23/544 ,  H10B63/10 ,  H10B63/00

CPC classification number: H01L23/544 ,  H10B63/10 ,  H10B63/24 ,  H10B63/80 ,  H01L2223/54426

Abstract: A semiconductor device includes: a semiconductor substrate including a first area and a second area; a plurality of memory cells provided in the first area; a mark provided in the second area and having a first side surface and a second side surface that intersects with the first side surface; and a plurality of patterns provided in the second area and provided on the first side surface and the second side surface.

公开(公告)号：US20220302378A1

公开(公告)日：2022-09-22

申请号：US17461029

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Kotaro NODA ,  Kyoko NODA ,  Ken HOSHINO ,  Shuichi TSUBATA

IPC: H01L45/00 ,  H01L27/24 ,  H01L23/528

Abstract: A semiconductor memory device includes a first interconnect, a second interconnect, a first storage layer, and a first insulating film. The first insulating film is provided along a surface of a part of the second interconnect and a surface of the first storage layer. The first insulating film is composed of Si, N, and O. The atomic ratio (N/O) between N and O in the first insulating film is not less than 1.0 at a first position which is the position of the second interconnect-side end surface of the first storage layer in a third direction. The atomic ratio (N/O) between N and O in the first insulating film is less than 1.0 at a second position which is the position of the end surface of the second interconnect, opposite to the first storage layer-side end surface, in the third direction.