公开(公告)号：US20240422978A1

公开(公告)日：2024-12-19

申请号：US18740746

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Kazuki MATSUNAGA ,  Shinya OKUDA ,  Shuichi TSUBATA

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor device includes a stacked film including electrode layers and first insulating films alternately stacked in a first direction, wherein the stacked film includes a first portion with a non-stepped shape and a second portion with a stepped shape; a second insulating film provided on the second portion; a columnar portion extending through the first portion and including a charge storage layer; a third insulating film extending through the second portion and the second insulating film; a plug provided on any of the electrode layers in the second portion; and a first region provided in the second portion and the second insulating film and including an element. A concentration of the element in the first region is higher than a concentration of the element in a region outside the first region in the second insulating film.

公开(公告)号：US20220302378A1

公开(公告)日：2022-09-22

申请号：US17461029

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Kotaro NODA ,  Kyoko NODA ,  Ken HOSHINO ,  Shuichi TSUBATA

IPC: H01L45/00 ,  H01L27/24 ,  H01L23/528

Abstract: A semiconductor memory device includes a first interconnect, a second interconnect, a first storage layer, and a first insulating film. The first insulating film is provided along a surface of a part of the second interconnect and a surface of the first storage layer. The first insulating film is composed of Si, N, and O. The atomic ratio (N/O) between N and O in the first insulating film is not less than 1.0 at a first position which is the position of the second interconnect-side end surface of the first storage layer in a third direction. The atomic ratio (N/O) between N and O in the first insulating film is less than 1.0 at a second position which is the position of the end surface of the second interconnect, opposite to the first storage layer-side end surface, in the third direction.

公开(公告)号：US20210287727A1

公开(公告)日：2021-09-16

申请号：US17016212

申请日：2020-09-09

Applicant: Kioxia Corporation

Inventor： Shuichi TSUBATA ,  Naoki AKIYAMA

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first conductor; a layer stack; an insulator on a side surface of the layer stack; a second conductor on a second surface of the layer stack; a third conductor; and a fourth conductor on the third conductor. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer and has a first surface in contact with the first conductor. The second surface is at an opposite side of the first surface. The third conductor has a portion on the second conductor and a portion on a side surface of the insulator.

公开(公告)号：US20220181386A1

公开(公告)日：2022-06-09

申请号：US17680772

申请日：2022-02-25

Applicant: Kioxia Corporation

Inventor： Shuichi TSUBATA

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10

Abstract: A method of manufacturing a magnetoresistive memory device, including forming first and second conductors, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer, in order, in a direction away from a substrate. Irradiating, with a first ion beam, the first ferromagnetic layer, the insulating layer, and the second ferromagnetic layer, wherein a third conductor is deposited on a side surface of the second ferromagnetic layer during the irradiation of the first ion beam. Irradiating, with a second ion beam, the second conductor, wherein a first insulator is deposited on a side surface of the insulating layer during the irradiation of the second ion beam; and irradiating, with a third ion beam, the first conductor, wherein a fourth conductor is deposited on a side surface of the second conductor during the irradiation of the third ion beam.

公开(公告)号：US20210074762A1

公开(公告)日：2021-03-11

申请号：US16816398

申请日：2020-03-12

Applicant: KIOXIA CORPORATION

Inventor： Shuichi TSUBATA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: According to an embodiment, a magnetoresistive memory device includes a first conductor with a first surface. A first structure on the first surface of the first conductor includes a first ferromagnetic layer. An insulating layer is on the first structure. A second structure on the insulating layer includes a second ferromagnetic layer. A second conductor is in contact with the first surface of the first conductor and a side surface of the first structure. A first insulator on the second conductor covers a side surface of the insulating layer, and is in contact with the side surface of the first structure and a side surface of the second structure. A third conductor on the first insulator is in contact with the side surface of the second structure.