公开(公告)号：US20250098165A1

公开(公告)日：2025-03-20

申请号：US18884125

申请日：2024-09-13

Applicant: Kioxia Corporation

Inventor： Fumie KIKUSHIMA ,  Michiko ISHIDA ,  Yosuke MURAKAMI ,  Hideomi AOIKE ,  Tatsuya ISHIKAWA ,  Ryo YOUGAUCHI ,  Tatsuo OGURA

IPC: H10B43/27 ,  H10B43/10

Abstract: In one embodiment, a semiconductor memory device includes a stacked body of a first conductive films and first insulation films alternately stacked with each other in a first direction. A plurality of columnar bodies is in the stacked body. Each columnar body includes a first semiconductor part extending in the first direction, a first insulation part between the first semiconductor part and the stacked body, a second insulation part between the first insulation part and the stacked body, third insulation parts between the second insulation part and the first conductive films, and fourth insulation parts between the second insulation part and the first insulation films. Each second insulation part has first portions between the first insulation part and the first conductive films and second portions between the first insulation part and the first insulation film. The second portions are thinner than the first portions in a second direction.