公开(公告)号：US20250098165A1

公开(公告)日：2025-03-20

申请号：US18884125

申请日：2024-09-13

Applicant: Kioxia Corporation

Inventor： Fumie KIKUSHIMA ,  Michiko ISHIDA ,  Yosuke MURAKAMI ,  Hideomi AOIKE ,  Tatsuya ISHIKAWA ,  Ryo YOUGAUCHI ,  Tatsuo OGURA

IPC: H10B43/27 ,  H10B43/10

Abstract: In one embodiment, a semiconductor memory device includes a stacked body of a first conductive films and first insulation films alternately stacked with each other in a first direction. A plurality of columnar bodies is in the stacked body. Each columnar body includes a first semiconductor part extending in the first direction, a first insulation part between the first semiconductor part and the stacked body, a second insulation part between the first insulation part and the stacked body, third insulation parts between the second insulation part and the first conductive films, and fourth insulation parts between the second insulation part and the first insulation films. Each second insulation part has first portions between the first insulation part and the first conductive films and second portions between the first insulation part and the first insulation film. The second portions are thinner than the first portions in a second direction.

公开(公告)号：US20240315019A1

公开(公告)日：2024-09-19

申请号：US18671074

申请日：2024-05-22

Applicant: Kioxia Corporation

Inventor： Hideto TAKEKIDA ,  Yosuke MURAKAMI ,  Keisuke NAKATSUKA ,  Yefei HAN

IPC: H10B43/10 ,  H10B43/20 ,  H10B43/50

CPC classification number: H10B43/10 ,  H10B43/20 ,  H10B43/50

Abstract: A semiconductor storage device of an embodiment includes a first conductive layer, a second conductive layer, a first conductive pillar, a first semiconductor layer, and a first storage layer. The first conductive layer extends in a first direction. The second conductive layer is along the first conductive layer in a third direction intersecting the first direction. The second conductive layer extends in the first direction. The first conductive pillar penetrates the first conductive layer and the second conductive layer in the third direction. The first semiconductor layer is in contact with the first conductive layer and the second conductive layer. The first semiconductor layer faces the first conductive pillar in the first direction. The first storage layer is between the first semiconductor layer and the first conductive pillar.

公开(公告)号：US20220085058A1

公开(公告)日：2022-03-17

申请号：US17190871

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Yosuke MURAKAMI ,  Satoshi NAGASHIMA ,  Nobuyuki MOMO ,  Takayuki ISHIKAWA ,  Yusuke ARAYASHIKI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/1157 ,  G11C7/18

Abstract: A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.