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公开(公告)号：US20220093187A1
公开(公告)日：2022-03-24
申请号：US17464898
申请日：2021-09-02
Applicant: Kioxia Corporation
Inventor： Rintaro IMAMURA , Hayato MASUBUCHI
Abstract: A memory system according to at least one embodiment includes a semiconductor storage device and a controller. The semiconductor storage device includes an output transistor and a circuit for changing a magnitude of a current of the output transistor. The controller receives a signal output from the semiconductor storage device via the output transistor, and controls the circuit based on a level of the received signal.
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