公开(公告)号：US20240206178A1

公开(公告)日：2024-06-20

申请号：US18536799

申请日：2023-12-12

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA ,  Saori MATSUSHITA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor storage element according to the present embodiment includes a laminated body, a semiconductor layer, a first insulator, a second insulator, a third insulator, and a fourth insulator. In the laminated body, the insulating layers and conductive layers are alternately laminated in a first direction. The third insulator is disposed between the laminated body and the second insulator. A first part of the fourth insulator is disposed between each of the conductive layers and the third insulator. The average concentration of heavy hydrogen in the first part is higher than the average concentration of heavy hydrogen in the third insulator. The ratio of heavy hydrogen concentration to light hydrogen concentration in the first part is smaller than the ratio of heavy hydrogen concentration to light hydrogen concentration in the third insulator.

公开(公告)号：US20240098998A1

公开(公告)日：2024-03-21

申请号：US18457645

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Saori MATSUSHITA ,  Tomonari SHIODA ,  Takanori YAMANAKA ,  Ryota FUJITSUKA

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A semiconductor memory device includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are stacked one by one alternately; and a pillar that extends in the stacked body in a stacking direction of the stacked body and includes a memory cell formed at each of intersections with the plurality of conductive layers, in which the pillar includes a semiconductor layer extending in the stacking direction, a silicon oxynitride layer covering a side wall of the semiconductor layer, a silicon nitride layer covering a side wall of the silicon oxynitride layer, and a silicon oxide layer covering a side wall of the silicon nitride layer, in which the silicon oxynitride layer has a hydrogen concentration of 1×1020 atm/cc or less in terms of average value.