公开(公告)号：US20230087572A1

公开(公告)日：2023-03-23

申请号：US17665031

申请日：2022-02-04

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA

IPC: H01L29/78 ,  H01L29/66

Abstract: In one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer provided on the substrate and including a first crystal grain. The device further includes a first film provided on a surface of the first semiconductor layer. The device further includes a second semiconductor layer provided on a surface of the first film, provided on the surface of the first semiconductor layer via an opening in the first film, including a second crystal grain, and included in a memory cell. Furthermore, a grain size of the second crystal grain is larger than a maximum value of a width of the second semiconductor layer in the opening.

公开(公告)号：US20240206178A1

公开(公告)日：2024-06-20

申请号：US18536799

申请日：2023-12-12

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA ,  Saori MATSUSHITA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor storage element according to the present embodiment includes a laminated body, a semiconductor layer, a first insulator, a second insulator, a third insulator, and a fourth insulator. In the laminated body, the insulating layers and conductive layers are alternately laminated in a first direction. The third insulator is disposed between the laminated body and the second insulator. A first part of the fourth insulator is disposed between each of the conductive layers and the third insulator. The average concentration of heavy hydrogen in the first part is higher than the average concentration of heavy hydrogen in the third insulator. The ratio of heavy hydrogen concentration to light hydrogen concentration in the first part is smaller than the ratio of heavy hydrogen concentration to light hydrogen concentration in the third insulator.

公开(公告)号：US20240098998A1

公开(公告)日：2024-03-21

申请号：US18457645

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Saori MATSUSHITA ,  Tomonari SHIODA ,  Takanori YAMANAKA ,  Ryota FUJITSUKA

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A semiconductor memory device includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are stacked one by one alternately; and a pillar that extends in the stacked body in a stacking direction of the stacked body and includes a memory cell formed at each of intersections with the plurality of conductive layers, in which the pillar includes a semiconductor layer extending in the stacking direction, a silicon oxynitride layer covering a side wall of the semiconductor layer, a silicon nitride layer covering a side wall of the silicon oxynitride layer, and a silicon oxide layer covering a side wall of the silicon nitride layer, in which the silicon oxynitride layer has a hydrogen concentration of 1×1020 atm/cc or less in terms of average value.

公开(公告)号：US20210074592A1

公开(公告)日：2021-03-11

申请号：US16811065

申请日：2020-03-06

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA ,  Takashi ISHIDA

IPC: H01L21/8234 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/535

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.

公开(公告)号：US20220077286A1

公开(公告)日：2022-03-10

申请号：US17350492

申请日：2021-06-17

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA ,  Yasunori OSHIMA ,  Taichi IWASAKI ,  Shota YAMAGIWA ,  Hiroto SAITO

IPC: H01L29/08 ,  H01L29/417 ,  H01L27/12 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.

公开(公告)号：US20210288056A1

公开(公告)日：2021-09-16

申请号：US17009144

申请日：2020-09-01

Applicant: Kioxia Corporation

Inventor： Takayuki ITO ,  Tomonari SHIODA

IPC: H01L27/11524 ,  H01L23/522 ,  H01L27/1157

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, first transistors including a first diffusion layer provided on a surface of the semiconductor substrate and including impurities and carbon, and first contact plugs provided on the first diffusion layer. The first diffusion layer includes a first region being in contact with the first contact plugs and a second region covering the first region. A concentration of the carbon is higher than that of the impurities in the first region as a depth from the surface is larger.