公开(公告)号：US20240090203A1

公开(公告)日：2024-03-14

申请号：US18455732

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Takanori AKITA ,  Kotaro NODA ,  Seiichi URAKAWA ,  Mutsumi OKAJIMA

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/33

Abstract: A semiconductor storage device includes a first oxide semiconductor layer that extends in a first direction; a second oxide semiconductor layer that extends in the first direction and is adjacent to the first oxide semiconductor layer in a second direction intersecting to the first direction; first wiring that extends in a third direction intersecting to the first direction and overlaps with the first oxide semiconductor layer in the third direction; second wiring that extends in the third direction and overlaps with the second oxide semiconductor layer in the third direction; a first insulating film that is provided between the first wiring and the first oxide semiconductor layer; a second insulating film that is provided between the second wiring and the second oxide semiconductor layer; a first conductor that is provided on the first oxide semiconductor layer; a second conductor that is provided on the second oxide semiconductor layer; and an insulating layer that has a gap between the first conductor and the second conductor or between the first wiring and the second wiring.