公开(公告)号：US20210288058A1

公开(公告)日：2021-09-16

申请号：US17152902

申请日：2021-01-20

Applicant: Kioxia Corporation

Inventor： Takahito NISHIMURA ,  Takuya NISHIKAWA ,  Shihoko ASAI

IPC: H01L27/11565 ,  H01L27/11575 ,  H01L27/11582

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first members, first conductive layers, and first and second pillars. The substrate includes first and second areas, and block areas. The first conductive layers are split by the first members. The first pillars are provided in an area in which the first area and the block areas overlap. The second pillars are provided in an area in which the second area and the block areas overlap. The second area includes a first sub-area in which the second pillars are periodically arranged in an area that overlaps at least one block area in the block areas. In the first sub-area, at least one second pillar is omitted from the second pillars that are periodically arranged.