公开(公告)号：US20240324238A1

公开(公告)日：2024-09-26

申请号：US18589342

申请日：2024-02-27

Applicant: Kioxia Corporation

Inventor： Reika TANAKA ,  Kunifumi SUZUKI ,  Kiwamu SAKUMA ,  Yoko YOSHIMURA ,  Takamasa HAMAI ,  Kensuke OTA ,  Yusuke HIGASHI ,  Yoshiaki ASAO ,  Masamichi SUZUKI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A storage device includes a first electrode, a second electrode, a first dielectric layer between the first and second electrodes and including oxygen and at least one of hafnium and zirconium, a second dielectric layer between the first electrode and the first dielectric layer, and an intermediate region between the first and second dielectric layers and in which a plurality of metallic portions are provided.

公开(公告)号：US20240315041A1

公开(公告)日：2024-09-19

申请号：US18593981

申请日：2024-03-04

Applicant: Kioxia Corporation

Inventor： Kiwamu SAKUMA ,  Takamasa HAMAI ,  Yuuichi KAMIMUTA ,  Kunifumi SUZUKI

IPC: H10B51/20 ,  H10B51/30

CPC classification number: H10B51/20 ,  H10B51/30

Abstract: A semiconductor memory device has a stacked body in which a plurality of electrode layers and a plurality of insulating layers are alternately stacked in a first direction, an electrode film that extends in the stacked body in the first direction, and a plurality of ferroelectric films. Each of the ferroelectric films is disposed between and in contact with one of the electrode layers and the electrode film, and has a thickness in the first direction that is greater than the electrode layer that is in contact therewith.