公开(公告)号：US20230380183A1

公开(公告)日：2023-11-23

申请号：US18229133

申请日：2023-08-01

Applicant: Kioxia Corporation

Inventor： Masayoshi IWAYAMA ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Tadashi KAI

IPC: H10B61/00 ,  H10N50/01

CPC classification number: H10B61/10 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.