公开(公告)号：US20230371406A1

公开(公告)日：2023-11-16

申请号：US18353908

申请日：2023-07-18

Applicant: Kioxia Corporation

Inventor： Tomohito KAWASHIMA ,  Takahiro NONAKA ,  Yusuke ARAYASHIKI ,  Takayuki ISHIKAWA

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/826 ,  H10N70/011 ,  H10N70/24 ,  H10N70/245 ,  H10N70/841 ,  H10N70/8416 ,  H10N70/8833 ,  H10B63/84

Abstract: A memory device, containing a first interconnection extending in a first direction; a first layer including tungsten nitride provided on the first interconnection; a stacked body layer provided on the first layer, a second layer including tungsten provided on the stacked body layer, a memory cell including a germanium tellurium antimony provided on the second layer, a second interconnection provided above the memory cell and extending in a second direction intersecting the first direction; and a third layer including tungsten disposed between the memory cell and the second interconnection, wherein the stacked body layer contains a first material layer of a first material which is different from a material of the first layer, and a second material layer including a second material which is different from the first material and the material of the first layer, wherein the second layer covers a lower surface of the memory cell, and wherein the third layer covers an upper surface of the memory cell.