公开(公告)号：US20230262971A1

公开(公告)日：2023-08-17

申请号：US17896900

申请日：2022-08-26

Applicant: Kioxia Corporation

Inventor： Yukinori KOYAMA ,  Takayuki ISHIKAWA ,  Shinji NAKADA

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a substrate; a plurality of first conductive layers arranged in a first direction intersecting the substrate and extending in a second direction intersecting the first direction; a semiconductor layer extending in the first direction and disposed adjacent the plurality of first conductive layers; and a plurality of first charge storage layers arranged in the first direction, each of the first charge storage layers provided between a corresponding one of the plurality of first conductive layers and the semiconductor layer. Each of the first charge storage layers includes silicon (Si) and at least one of germanium (Ge), tin (Sn), magnesium (Mg), or carbon (C).

公开(公告)号：US20230371406A1

公开(公告)日：2023-11-16

申请号：US18353908

申请日：2023-07-18

Applicant: Kioxia Corporation

Inventor： Tomohito KAWASHIMA ,  Takahiro NONAKA ,  Yusuke ARAYASHIKI ,  Takayuki ISHIKAWA

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/826 ,  H10N70/011 ,  H10N70/24 ,  H10N70/245 ,  H10N70/841 ,  H10N70/8416 ,  H10N70/8833 ,  H10B63/84

Abstract: A memory device, containing a first interconnection extending in a first direction; a first layer including tungsten nitride provided on the first interconnection; a stacked body layer provided on the first layer, a second layer including tungsten provided on the stacked body layer, a memory cell including a germanium tellurium antimony provided on the second layer, a second interconnection provided above the memory cell and extending in a second direction intersecting the first direction; and a third layer including tungsten disposed between the memory cell and the second interconnection, wherein the stacked body layer contains a first material layer of a first material which is different from a material of the first layer, and a second material layer including a second material which is different from the first material and the material of the first layer, wherein the second layer covers a lower surface of the memory cell, and wherein the third layer covers an upper surface of the memory cell.

公开(公告)号：US20220085059A1

公开(公告)日：2022-03-17

申请号：US17190939

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Tatsuya KATO ,  Satoshi NAGASHIMA ,  Yefei HAN ,  Takayuki ISHIKAWA

IPC: H01L27/11582 ,  H01L23/522 ,  H01L29/423 ,  H01L27/1157

Abstract: A semiconductor storage device includes: a first conductive layer extending in a first direction; a second conductive layer that is disposed apart from the first conductive layer in a second direction intersecting the first direction, and extends in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer and arranged in the first direction, each of which includes a first portion facing the first conductive layer, and a second portion facing the second conductive layer; a plurality of first memory cells provided between the first conductive layer and the semiconductor layers, respectively; and a plurality of second memory cells provided between the second conductive layer and the semiconductor layers, respectively. A gap is provided between the two semiconductor layers adjacent in the first direction.

公开(公告)号：US20220085058A1

公开(公告)日：2022-03-17

申请号：US17190871

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Yosuke MURAKAMI ,  Satoshi NAGASHIMA ,  Nobuyuki MOMO ,  Takayuki ISHIKAWA ,  Yusuke ARAYASHIKI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/1157 ,  G11C7/18

Abstract: A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.

公开(公告)号：US20230301108A1

公开(公告)日：2023-09-21

申请号：US17885739

申请日：2022-08-11

Applicant: Kioxia Corporation

Inventor： Tatsuki KOSHIDA ,  Takayuki ISHIKAWA ,  Kenzo MANABE ,  Daisuke KUWABARA

IPC: H01L27/11573 ,  H01L27/11568 ,  H01L21/28

CPC classification number: H01L27/11573 ,  H01L27/11568 ,  H01L29/40117

Abstract: A semiconductor memory device includes a semiconductor layer extending in a first direction, a conductive layer opposed to the semiconductor layer in a second direction intersecting with the first direction, an electric charge accumulating layer disposed between the semiconductor layer and the conductive layer, a first insulating layer disposed between the semiconductor layer and the electric charge accumulating layer, and a second insulating layer disposed between the conductive layer and the electric charge accumulating layer. The semiconductor layer includes at least one protrusion protruding in the second direction toward the electric charge accumulating layer. A position in the first direction of the protrusion is inside with respect to corner portions at both ends in the first direction of a surface opposed to the semiconductor layer in the electric charge accumulating layer.

公开(公告)号：US20220085060A1

公开(公告)日：2022-03-17

申请号：US17191217

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Ryota NARASAKI ,  Weili CAI ,  Satoshi NAGASHIMA ,  Takayuki ISHIKAWA ,  Yusuke SHIMADA ,  Yefei HAN

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/11556

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.