公开(公告)号：US20210296585A1

公开(公告)日：2021-09-23

申请号：US17019664

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Weidong LI ,  Shogo ITAI ,  Kouji MATSUO

IPC: H01L45/00

Abstract: A switching device in an embodiment includes: a first electrode; a second electrode, and a switching layer disposed between the first electrode and the second electrode. The switching layer is made of a material containing hafnium nitride. Otherwise, the switching layer is made of a material containing bismuth and at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, and gallium oxide, or a material containing at least one selected from the group consisting of bismuth oxide, bismuth nitride, bismuth boride, and bismuth sulfide.