公开(公告)号：US20230189661A1

公开(公告)日：2023-06-15

申请号：US17898812

申请日：2022-08-30

Applicant: KIOXIA CORPORATION

Inventor： Shogo ITAI ,  Kazuya MATSUZAWA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Hideyuki SUGIYAMA

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  G11C5/08

CPC classification number: H01L43/10 ,  G11C5/08 ,  H01L27/222 ,  H01L43/02

Abstract: A switching element includes a first conductive layer, a second conductive layer, and a switching material layer provided between the first conductive layer and the second conductive layer and formed of an insulating material containing an additional element. The switching material layer includes a first interface region including a first interface between the first conductive layer and the switching material layer and a second interface region including a second interface between the second conductive layer and the switching material layer. A concentration of the additional element in the switching material layer has a first peak in the first interface region.

公开(公告)号：US20220085277A1

公开(公告)日：2022-03-17

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo ITAI ,  Tadaomi DAIBOU ,  Yuichi ITO ,  Katsuyoshi KOMATSU

IPC: H01L43/02 ,  H01L27/22 ,  H01F10/32

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

公开(公告)号：US20210296568A1

公开(公告)日：2021-09-23

申请号：US17003846

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Taichi IGARASHI ,  Tadaomi DAIBOU ,  Junichi ITO ,  Tadashi KAI ,  Shogo ITAI ,  Toshiyuki ENDA

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

公开(公告)号：US20210296585A1

公开(公告)日：2021-09-23

申请号：US17019664

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Weidong LI ,  Shogo ITAI ,  Kouji MATSUO

IPC: H01L45/00

Abstract: A switching device in an embodiment includes: a first electrode; a second electrode, and a switching layer disposed between the first electrode and the second electrode. The switching layer is made of a material containing hafnium nitride. Otherwise, the switching layer is made of a material containing bismuth and at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, and gallium oxide, or a material containing at least one selected from the group consisting of bismuth oxide, bismuth nitride, bismuth boride, and bismuth sulfide.