公开(公告)号：US20220223607A1

公开(公告)日：2022-07-14

申请号：US17470948

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Takuyo NAKAYAMA ,  Takashi ICHIKAWA ,  Yutaro OGAWA

IPC: H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first conductive layers, and an insulating layer. The first conductive layers include terraced portions. The insulating layer is provided on the terraced portions. The first conductive layers include first to third layer groups. The first layer group is located the highest among the three or more layer groups. The insulating layer includes first to third portions. The first portion is sandwiched by the first layer group. The second portion is sandwiched by the second layer group. The third portion is sandwiched by the third layer group. The second portion is shifted to one side of a direction and the third portion is shifted to the other side of the direction with respect to the first portion.