公开(公告)号：US20210091044A1

公开(公告)日：2021-03-25

申请号：US16801312

申请日：2020-02-26

Applicant: Kioxia Corporation

Inventor： Tetsuya YAMASHITA ,  Takuyo NAKAYAMA ,  Takashi ICHIKAWA ,  Tadayoshi UECHI ,  Takashi IZUMIDA

IPC: H01L25/065 ,  H01L27/11578 ,  H01L27/11575

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body in which a plurality of first conductive layers are stacked at intervals in a first direction above a semiconductor substrate; a second stacked body in which a plurality of second conductive layers are stacked at intervals in the first direction above the semiconductor substrate; and a first slit extending in a second direction perpendicular to the first direction, the first slit isolating the first stacked body and the second stacked body in a third direction perpendicular to the first and second directions.

公开(公告)号：US20230324317A1

公开(公告)日：2023-10-12

申请号：US17939145

申请日：2022-09-07

Applicant: Kioxia Corporation

Inventor： Takahiro IKEDA ,  Takashi ICHIKAWA ,  Takaki HASHIMOTO ,  Hiroyuki TANIZAKI

IPC: G01B15/04 ,  G01N23/201

CPC classification number: G01N23/201 ,  G01B15/04 ,  G01N2223/054 ,  G01N2223/611

Abstract: According to one embodiment, there is provided an inspection device including a measurement unit and a controller. The measurement unit measures a physical quantity in accordance with a predetermined pattern for a sample with the predetermined pattern, and generates a first spectral pattern in accordance with a measurement result. The controller predicts a processed cross-sectional shape by applying a parameter to a shape function indicating an ion flux amount in accordance with an etching depth in a case where the predetermined pattern is processed in dry etching processing, determines a second spectral pattern in accordance with the processed cross-sectional shape that has been predicted, adjusts the parameter while comparing the first spectral pattern with the second spectral pattern, and reconstructs the processed cross-sectional shape of the sample in accordance with an adjustment result.

公开(公告)号：US20220223607A1

公开(公告)日：2022-07-14

申请号：US17470948

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Takuyo NAKAYAMA ,  Takashi ICHIKAWA ,  Yutaro OGAWA

IPC: H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first conductive layers, and an insulating layer. The first conductive layers include terraced portions. The insulating layer is provided on the terraced portions. The first conductive layers include first to third layer groups. The first layer group is located the highest among the three or more layer groups. The insulating layer includes first to third portions. The first portion is sandwiched by the first layer group. The second portion is sandwiched by the second layer group. The third portion is sandwiched by the third layer group. The second portion is shifted to one side of a direction and the third portion is shifted to the other side of the direction with respect to the first portion.

公开(公告)号：US20220216228A1

公开(公告)日：2022-07-07

申请号：US17656143

申请日：2022-03-23

Applicant: Kioxia Corporation

Inventor： Tetsuya YAMASHITA ,  Takuyo NAKAYAMA ,  Takashi ICHIKAWA ,  Tadayoshi UECHI ,  Takashi IZUMIDA

IPC: H01L27/11565 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body in which a plurality of first conductive layers are stacked at intervals in a first direction above a semiconductor substrate; a second stacked body in which a plurality of second conductive layers are stacked at intervals in the first direction above the semiconductor substrate; and a first slit extending in a second direction perpendicular to the first direction, the first slit isolating the first stacked body and the second stacked body in a third direction perpendicular to the first and second directions.