公开(公告)号：US20070155070A1

公开(公告)日：2007-07-05

申请号：US11620154

申请日：2007-01-05

申请人： Kiyoshi OUCHI ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

发明人： Kiyoshi OUCHI ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.

摘要翻译： 一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。 在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。 当制造TFT时，该低电阻半导体层用于形成源极和漏极。 由于C，N和O杂质降低了TFT的迁移率，所以使用多晶硅，其中污染物浓度满足以下条件：碳浓度<= 3×10 9 / >，氮浓度<= 5×10 17 cm -3，氧浓度<= 3×10 9 cm -3 -3 / 。

公开(公告)号：US20080290344A1

公开(公告)日：2008-11-27

申请号：US12129142

申请日：2008-05-29

申请人： Mitsuharu TAI ,  Mutsuko HATANO ,  Takeshi SATO ,  Seongkee PARK ,  Kiyoshi OUCHI

发明人： Mitsuharu TAI ,  Mutsuko HATANO ,  Takeshi SATO ,  Seongkee PARK ,  Kiyoshi OUCHI

IPC分类号： H01L31/036 ,  G02F1/136 ,  H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S438/949

摘要： An image display device manufactured by using a polycrystalline semiconductor film. The polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, small crystal grain boundary groups each composed of three or more crystal grain boundaries arranged substantially in parallel to each other and with an interval of not greater than 100 μm are included in a part of the region, and the small crystal grain boundary groups are partially eliminated.

摘要翻译： 一种使用多晶半导体膜制造的图像显示装置。 多晶半导体膜由具有宽度至少为2μm，长度至少为3μm的晶界的区域的晶粒构成，小晶粒边界组由三个以上构成的晶粒边界基本平行地排列 并且间隔不大于100μm的区域包含在该区域的一部分中，并且部分地消除了小的晶粒边界组。