Sealing structure of plasma processing apparatus, sealing method, and plasma processing apparatus including the sealing structure
    1.
    发明授权
    Sealing structure of plasma processing apparatus, sealing method, and plasma processing apparatus including the sealing structure 有权
    等离子体处理装置的密封结构,密封方法和包括密封结构的等离子体处理装置

    公开(公告)号:US08069704B2

    公开(公告)日:2011-12-06

    申请号:US12419574

    申请日:2009-04-07

    IPC分类号: G01M3/02

    CPC分类号: H01L21/67069 C23C16/54

    摘要: A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.

    摘要翻译: 对应于密封结构的闸阀密封等离子体产生室的开口,并且包括阀体,阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。 第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。 第一和第二环形密封构件彼此不接触,即在它们之间形成间隙。 在第一环形密封构件的长度方向上布置有多个气体槽。 通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽,该间隙经由气体槽与等离子体生成室连通。 在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。 在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部,该凹部与气体喷出通路的气体出口连接。

    SEALING STRUCTURE OF PLASMA PROCESSING APPARATUS, SEALING METHOD, AND PLASMA PROCESSING APPARATUS INCLUDING THE SEALING STRUCTURE
    2.
    发明申请
    SEALING STRUCTURE OF PLASMA PROCESSING APPARATUS, SEALING METHOD, AND PLASMA PROCESSING APPARATUS INCLUDING THE SEALING STRUCTURE 有权
    等离子体加工设备的密封结构,密封方法和等离子体加工设备,包括密封结构

    公开(公告)号:US20090255324A1

    公开(公告)日:2009-10-15

    申请号:US12419574

    申请日:2009-04-07

    CPC分类号: H01L21/67069 C23C16/54

    摘要: A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.

    摘要翻译: 对应于密封结构的闸阀密封等离子体产生室的开口,并且包括阀体,阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。 第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。 第一和第二环形密封构件彼此不接触,即在它们之间形成间隙。 在第一环形密封构件的长度方向上布置有多个气体槽。 通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽,该间隙经由气体槽与等离子体生成室连通。 在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。 在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部,该凹部与气体喷出通路的气体出口连接。