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    OPTICAL COMMUNICATION MODULE AND OPTICAL COMMUNICATION APPARATUS
    1.
    发明申请
    OPTICAL COMMUNICATION MODULE AND OPTICAL COMMUNICATION APPARATUS 审中-公开
    光通信模块和光通信设备

    公开(公告)号：US20130064553A1

    公开(公告)日：2013-03-14

    申请号：US13610795

    申请日：2012-09-11

    申请人： Koji NAKAHARA

    发明人： Koji NAKAHARA

    IPC分类号： H04B10/14

    CPC分类号： H04B10/564 ,  G02B6/4215 ,  G02B6/4246

    摘要： An optical communication module comprising: a light emitting element to emit light; a light transmission medium to receive incidence of the light from the light emitting element; a diverging unit to be provided on the light transmission medium and to diverge some proportion of the light emitted from the light emitting element to the light transmission medium and propagating within the light transmission medium; and a first light receiving element to receive the light from the light emitting element, which is diverged by the diverging unit.

    摘要翻译： 一种光通信模块，包括：发光元件; 光传输介质，用于接收来自发光元件的光的入射; 设置在光传输介质上的发散单元，并且将从发光元件发射的光的一部分分散到光传输介质并在光传输介质内传播; 以及第一光接收元件，用于接收来自发光元件的光，该光被发散单元分流。

    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE 失效
    半导体存储器件的半导体存储器件和制造方法

    公开(公告)号：US20120049258A1

    公开(公告)日：2012-03-01

    申请号：US13049573

    申请日：2011-03-16

    申请人： Koji NAKAHARA ,  Kazuhiro Matsuo ,  Masayuki Tanaka

    发明人： Koji NAKAHARA ,  Kazuhiro Matsuo ,  Masayuki Tanaka

    IPC分类号： H01L29/788 ,  H01L21/762

    CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L27/11539 ,  H01L27/11541 ,  H01L27/11543

    摘要： According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and the peripheral circuit region, a first conductive film is formed on the first dielectric film in the cell region and the peripheral circuit region, a first inter-conductive-film dielectric film is formed on the first conductive film in the cell region, a second inter-conductive-film dielectric film is formed on the first conductive film in the peripheral circuit region and a film thickness thereof is larger than the first inter-conductive-film dielectric film, and a second conductive film is formed on the first inter-conductive-film dielectric film in the cell region and the second inter-conductive-film dielectric film in the peripheral circuit region.

    摘要翻译： 根据一个实施例，半导体衬底包括单元区域和外围电路区域，在单元区域和外围电路区域中的半导体衬底上形成第一电介质膜，在第一电介质膜上形成第一导电膜 单元区域和外围电路区域，在单元区域中的第一导电膜上形成第一导电膜电介质膜，在外围电路的第一导电膜上形成第二导电膜电介质膜 区域，其膜厚度大于第一导电膜电介质膜，并且第二导电膜形成在电池区域中的第一导电膜电介质膜上，第二导电膜电介质膜 在外围电路区域。