公开(公告)号：US20130141156A1

公开(公告)日：2013-06-06

申请号：US13567749

申请日：2012-08-06

申请人： Koon Hoo Teo ,  Peijie Feng ,  Chunjie Duan ,  Toshiyuki Oishi ,  Nakayama Masatoshi

发明人： Koon Hoo Teo ,  Peijie Feng ,  Chunjie Duan ,  Toshiyuki Oishi ,  Nakayama Masatoshi

IPC分类号： H01L29/778 ,  G05F1/00

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.

摘要翻译： 一种装置包括用于通过导电路径发送电荷的源; 用于接收电子费用的排水口; 用于提供所述传导路径的至少一部分的堆叠; 以及可操作地连接到所述堆叠的门，用于控制所述电子电荷的导通。 该堆叠包括绝缘体层，N极层和阻挡层，其被选择为使得在器件的操作期间，形成在N极层中的导电路径包括二维电子气（2DEG）通道和 反向载波信道。

公开(公告)号：US08624667B2

公开(公告)日：2014-01-07

申请号：US13567749

申请日：2012-08-06

申请人： Koon Hoo Teo ,  Peijie Feng ,  Chunjie Duan ,  Toshiyuki Oishi ,  Nakayama Masatoshi

发明人： Koon Hoo Teo ,  Peijie Feng ,  Chunjie Duan ,  Toshiyuki Oishi ,  Nakayama Masatoshi

IPC分类号： H01L25/00

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.

摘要翻译： 一种装置包括用于通过导电路径发送电荷的源; 用于接收电子费用的排水口; 用于提供所述传导路径的至少一部分的堆叠; 以及可操作地连接到所述堆叠的门，用于控制所述电子电荷的导通。 该堆叠包括绝缘体层，N极层和阻挡层，其被选择为使得在器件的操作期间，形成在N极层中的导电路径包括二维电子气（2DEG）通道和 反向载波信道。