公开(公告)号：US20100032780A1

公开(公告)日：2010-02-11

申请号：US12505818

申请日：2009-07-20

申请人： Kor Seng ANG

发明人： Kor Seng ANG

IPC分类号： H01L29/82 ,  B05D5/00 ,  C23C14/34

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： Disclosed is a magnetoresistive random access memory (“MRAM”) device comprising a plurality of layers on a substrate. The plurality of layers comprises pinning layers, flipping layers, and at least one insulating layer between the pinning layers and the flipping layers. An eddy current side wall encapsulates at least the pinning layers of the plurality of layers. The eddy current side wall comprises a grain insulating layer for electrical insulation, and a magnetic barrier layer for magnetic isolation.

摘要翻译： 公开了一种在衬底上包括多个层的磁阻随机存取存储器（“MRAM”）器件。 多个层包括钉扎层，翻转层以及钉扎层和翻转层之间的至少一个绝缘层。 涡流侧壁至少封装多层的钉扎层。 涡流侧壁包括用于电绝缘的晶粒绝缘层和用于磁隔离的磁阻层。

公开(公告)号：US20100003834A1

公开(公告)日：2010-01-07

申请号：US12493612

申请日：2009-06-29

申请人： Kor Seng ANG

发明人： Kor Seng ANG

IPC分类号： H01L21/02 ,  H01L43/08

CPC分类号： H01L28/40

摘要： Disclosed is a method to convert a low resistance cell in a MRAM device to a capacitive cell. The low resistance cell has a plurality of layers on a substrate. At least one layer remote from the substrate is sensitive to oxygen infusion. The method includes removing a cap layer of the cell and applying an oxygen barrier around the cell to expose at least a part of a surface of the at least one layer remote from the substrate. The at least one layer is oxidized. The oxygen barrier is removed.

摘要翻译： 公开了一种将MRAM器件中的低电阻单元转换为电容单元的方法。 低电阻单元在基板上具有多个层。 远离基底的至少一层对氧气输注敏感。 该方法包括去除细胞的盖层并在细胞周围施加氧阻挡层以暴露远离基底的至少一层的表面的至少一部分。 至少一层被氧化。 去除氧气屏障。