公开(公告)号：US12183821B2

公开(公告)日：2024-12-31

申请号：US17346372

申请日：2021-06-14

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Joon-Kyu Han

IPC: H01L29/78 ,  G06N3/063 ,  H01L29/45

Abstract: Disclosed is a single transistor with a double gate structure for an adjustable firing threshold voltage and a neuromorphic system using the same. A single transistor neuron with a double gate structure according to an example embodiment includes a barrier material layer formed on a semiconductor substrate and comprising a hole barrier material or an electron barrier material; a floating body layer formed on the barrier material layer; a source and a drain formed at both sides of the floating body layer, respectively; a driving gate formed at a first side of the floating body layer without contacting the source and the drain; a control gate formed at a second side of the floating body layer without contacting the source and the drain; and a gate insulating film formed between the floating body layer and the driving gate and between the floating body layer and the control gate.

公开(公告)号：US20210391462A1

公开(公告)日：2021-12-16

申请号：US17346372

申请日：2021-06-14

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Joon-Kyu Han

IPC: H01L29/78 ,  H01L29/45 ,  G06N3/063

Abstract: Disclosed is a single transistor with a double gate structure for an adjustable firing threshold voltage and a neuromorphic system using the same. A single transistor neuron with a double gate structure according to an example embodiment includes a barrier material layer formed on a semiconductor substrate and comprising a hole barrier material or an electron barrier material; a floating body layer formed on the barrier material layer; a source and a drain formed at both sides of the floating body layer, respectively; a driving gate formed at a first side of the floating body layer without contacting the source and the drain; a control gate formed at a second side of the floating body layer without contacting the source and the drain; and a gate insulating film formed between the floating body layer and the driving gate and between the floating body layer and the control gate.