公开(公告)号：US12279436B2

公开(公告)日：2025-04-15

申请号：US18197189

申请日：2023-05-15

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghun Jeon ,  Taeho Kim

IPC: H10B51/30 ,  G11C11/22 ,  H10B51/20

Abstract: Disclosed are a non-volatile memory including a negative capacitance blocking oxide layer, an operating method of the same, and a manufacturing method of the same. The non-volatile memory may include a tunneling oxide layer formed on a channel; a charge storage layer formed on one surface of the tunneling oxide layer; a negative capacitance blocking oxide layer in which a dielectric layer and an imprinted polarization layer are sequentially configured on one surface of the charge storage layer; and a gate formed on one surface of the negative capacitance blocking oxide layer.