公开(公告)号：US12268008B2

公开(公告)日：2025-04-01

申请号：US17743314

申请日：2022-05-12

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghun Jeon ,  Youngin Goh

IPC: H10B53/20

Abstract: Disclosed are a 3D non-volatile memory, an operating method thereof, and a manufacturing method thereof. The 3D non-volatile memory includes a bit line formed to extend in a vertical direction and horizontal structures contacting the bit line while being formed to extend in a horizontal direction and being space in the vertical direction. Each of the horizontal structures includes a ferroelectric layer contacting the bit line, a middle metal layer surrounded by the ferroelectric layer, a dielectric layer surrounded by the middle metal layer, and a word line surrounded by the dielectric layer.

公开(公告)号：US11729992B2

公开(公告)日：2023-08-15

申请号：US17321814

申请日：2021-05-17

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghun Jeon ,  Youngin Goh

IPC: H01L21/00 ,  H10B53/30 ,  H01L49/02

CPC classification number: H10B53/30 ,  H01L28/60

Abstract: Provided is a nonvolatile memory device including a lower electrode on a substrate, an upper electrode on the lower electrode, a tunnel barrier pattern between the lower electrode and the upper electrode, and a fixed charge pattern in contact with the lower electrode and spaced apart from the tunnel barrier pattern with the lower electrode therebetween. The tunnel barrier pattern includes an anti-ferroelectric material. The lower electrode includes a first material. The upper electrode includes a second material. The first material and the second material have different work functions.