公开(公告)号：US20130130063A1

公开(公告)日：2013-05-23

申请号：US13678856

申请日：2012-11-16

Applicant: Korea Institute of Science and Technology

Inventor： Gyung Min CHOI ,  Byoung Chul MIN ,  Kyung Ho SHIN

IPC: G11B5/64 ,  G11B5/66 ,  G11B5/84 ,  G11B5/72

CPC classification number: G11B5/645 ,  G11B5/65 ,  G11B5/66 ,  G11B5/72 ,  G11B5/84 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L10-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

Abstract translation: 提供垂直磁化的薄膜结构和制造垂直磁化的薄膜结构的方法。 垂直磁化的薄膜结构包括：i）基底层，ii）位于基底层上并具有L10结晶结构的磁性层，和iii）位于磁性层上的金属氧化物层。