公开(公告)号：US06954398B2

公开(公告)日：2005-10-11

申请号：US10633710

申请日：2003-08-05

申请人： Kouichiro Ninomiya ,  Isamu Fujii ,  Hiroki Fujisawa

发明人： Kouichiro Ninomiya ,  Isamu Fujii ,  Hiroki Fujisawa

IPC分类号： G11C11/407 ,  G11C8/08 ,  G11C8/14 ,  G11C11/401 ,  G11C11/408 ,  G11C8/00

CPC分类号： G11C8/08 ,  G11C8/14 ,  G11C11/4085

摘要： A semiconductor memory device is capable of performing a faster operation by reducing a load applied to a subword selection line or driving a subword driver provided for each memory mat. In a drive method of subword drivers that are actuated in response to subword selection signals supplied through subword selection lines, the subword selection lines are branched according to the number of memory mats. Each subword selection signal has a polarity to a branching position and an inverted polarity from each branching position to each subword driver. The inverted subword selection signal together with a main word signal are calculated to operation in each subword driver and output as a subword drive signal. The plurality of subword drivers share an inverter circuit for inverting the main word signals so as to permit a simplified circuit configuration.

摘要翻译： 半导体存储器件能够通过减小施加到子选择线的负载或驱动为每个存储器垫提供的子字驱动器来执行更快的操作。 在响应于通过子选择线提供的子字选择信号被致动的子字驱动器的驱动方法中，子字选择线根据存储器数的数量被分支。 每个子字选择信号具有分支位置的极性和从每个分支位置到每个子字驱动器的反相极性。 计算出反相子字选择信号与主字信号一起在每个子字驱动器中的操作，并作为子字驱动信号输出。 多个子字驱动器共享用于反转主字信号的逆变器电路，以便允许简化的电路配置。