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公开(公告)号：US06342691B1
公开(公告)日：2002-01-29
申请号：US09439833
申请日：1999-11-12
申请人： Kristian E. Johnsgard , Jean-François Daviet , James A. Givens , Stephen E. Savas , Brad S. Mattson , Ashur J. Atanos
发明人： Kristian E. Johnsgard , Jean-François Daviet , James A. Givens , Stephen E. Savas , Brad S. Mattson , Ashur J. Atanos
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C30B31/12
摘要： A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers may comprise silicon carbide coated graphite; the outer layers may comprise opaque quartz. An embodiment of the invention includes a vacuum spool having a large conduction pathway for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples and optical pyrometers, with the advantage that a thermocouple may be used to calibrate an optical pyrometer in situ. An insulating shutter may be used to insulate the port through which substrates are inserted into the insulated and heated cavity. Support posts and gas injectors may include ports for optical pyrometers.
摘要翻译： 相对于传统的灯加热系统，半导体衬底处理系统和使用具有大热质量的稳定的热源的方法。 选择系统尺寸和处理参数以向基板提供实质的热通量，同时减少对周围环境，特别是从热源和基板的边缘的热损失的潜力。 本发明的方面包括双电阻加热器系统，其包括被周边或边缘加热器包围的基座或主加热器。 边缘加热器的阻抗可以与初级加热器的阻抗基本匹配，使得单个电源可以用于向两个加热器供电。 两个电阻加热器将热量传递到加热块，并且加热器和加热块基本上封闭在绝缘腔内。 绝缘腔的壁可以包括多层绝缘体，并且这些层可以基本上同心地布置。 最内层可包括碳化硅涂覆的石墨; 外层可以包括不透明的石英。 本发明的实施例包括具有用于从包含电阻加热器的室的区域排出气体的大的传导路径的真空阀芯，以及用于从腔室的其它区域去除气体的小的传导路径。 温度测量传感器包括热电偶和光学高温计，其优点是热电偶可用于原位校准光学高温计。 可以使用绝缘快门来将通过哪个基板插入绝缘和加热腔的端口绝缘。 支撑柱和气体注入器可以包括用于光学高温计的端口。
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2.发明授权Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing 失效用于半导体制造的热处理系统中的晶片温度控制的基于模型的方法公开(公告)号：US06169271A
公开(公告)日：2001-01-02
申请号：US09351987
申请日：1999-07-12
IPC分类号： F27B514
摘要： A method for controlling wafer temperature in a thermal reactor. A wafer is positioned between two or more surfaces, one or more of which are heated. A control temperature is calculated based on the temperatures of the surfaces. The heat applied to the surface(s) is adjusted in response to the control temperature in order to maintain the wafer temperature within narrowly defined limits.
摘要翻译： 一种用于控制热反应器中晶片温度的方法。 晶片位于两个或多个表面之间，其中一个或多个被加热。 基于表面的温度计算控制温度。 响应于控制温度调节施加到表面的热量，以便将晶片温度保持在狭窄的限定范围内。
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公开(公告)号：US06236023B1
公开(公告)日：2001-05-22
申请号：US09351258
申请日：1999-07-12
IPC分类号： F27B514
CPC分类号： C30B31/10 , C23C16/4405 , C30B25/08 , Y10S438/905
摘要： A method for in-situ cleaning of a hot wall RTP system. Internal components are heated to high temperatures above 500° C. A halocarbon gas, inert gas and oxidizing gas are flowed through the reactor for a period which may exceed 20 minutes and then purged to remove contaminants.
摘要翻译： 一种用于原位清洗热壁RTP系统的方法。 将内部组分加热至高于500℃的高温。卤代烃气体，惰性气体和氧化气体通过反应器流过可能超过20分钟的时间，然后被吹扫以除去污染物。
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公开(公告)号：US06554953B2
公开(公告)日：2003-04-29
申请号：US09952640
申请日：2001-09-13
申请人： Jean-François Daviet
发明人： Jean-François Daviet
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.
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5.发明授权Method and apparatus to produce large inductive plasma for plasma processing 失效用于等离子体处理产生大电感等离子体的方法和装置公开(公告)号：US06321681B1
公开(公告)日：2001-11-27
申请号：US09341705
申请日：1999-09-20
IPC分类号： C23C1600
CPC分类号： H01J37/32477 , H01J37/321 , H01J37/32504 , H01J37/32623
摘要： A plasma processing apparatus comprises a processing chamber having at least one opening for receiving field energy by inductive coupling, and at least one field energy source arranged to induce the field energy into the chamber via the corresponding opening. The field energy source comprises an inductor device associated with a magnetic core. The magnetic core forms a closure and gas seal for the corresponding opening.
摘要翻译： 等离子体处理装置包括处理室，该处理室具有至少一个用于通过感应耦合接收场能的开口，以及至少一个场能量源，其布置成通过相应的开口将场能引入室。 场能源包括与磁芯相关联的电感器件。 磁芯形成用于相应开口的封闭和气密封。
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公开(公告)号：US06312555B1
公开(公告)日：2001-11-06
申请号：US09528562
申请日：2000-03-20
申请人： Jean-François Daviet
发明人： Jean-François Daviet
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.
摘要翻译： 描述等离子体反应器和半导体衬底的处理方法。 感应线圈将电力电感耦合到反应器中以产生等离子体。 在感应线圈和等离子体之间插入薄静电屏蔽以减少电容耦合。 屏蔽电磁薄，使得感应功率通过屏蔽以维持等离子体，同时电容耦合基本衰减。 减小电容耦合减少了等离子体电位相对于衬底的调制，并允许更可控的处理。
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