公开(公告)号：US20240186128A1

公开(公告)日：2024-06-06

申请号：US18418930

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Alan RITCHIE ,  John C. FORSTER ,  Muhammad RASHEED

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US11955367B2

公开(公告)日：2024-04-09

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei Tanabe ,  Koji Yoshimura ,  Ryo Matsuhashi

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/68764 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32504 ,  H01J37/3435 ,  H01L21/02274 ,  H01J2237/332

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US11915917B2

公开(公告)日：2024-02-27

申请号：US16902194

申请日：2020-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan Ritchie ,  John C. Forster ,  Muhammad Rasheed

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  H01J37/32504 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3411

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

公开(公告)号：US20180104767A1

公开(公告)日：2018-04-19

申请号：US15729360

申请日：2017-10-10

Applicant: Applied Materials, Inc.

Inventor： Gang PENG ,  David W. GROECHEL

IPC: B23K26/00 ,  B23K26/12 ,  H01J37/32

CPC classification number: B23K26/355 ,  B23K26/123 ,  B23K2103/56 ,  H01J37/32504

Abstract: A method of providing a texture to a surface of a component for use in a semiconductor processing chamber is provided. The method includes directing a beam of photons at the surface of the component and scanning the beam of photons across a first region of the surface of the component to form a plurality of features on the surface within the first region. The features that are formed are depressions, protuberances, or combinations thereof.

公开(公告)号：US09322092B2

公开(公告)日：2016-04-26

申请号：US13606346

申请日：2012-09-07

Applicant: Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

Inventor： Nobuo Yamaguchi ,  Kimiko Mashimo ,  Shinya Nagasawa

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC classification number: C23C14/34 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3447

Abstract: It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).

Abstract translation: 本发明的目的是防止沉积的膜粘附到排气室，以抑制颗粒的产生。 溅射装置（1）包括一个可拆卸地放置在排气室（8）中并容纳处于缩回状态的挡板（19）的挡板容纳单元（23），以及遮蔽构件（40a，40b） 排气室（8）的排气口，并且至少部分地形成在活门容纳单元（23）的开口部分周围。

公开(公告)号：US20160079043A1

公开(公告)日：2016-03-17

申请号：US14851996

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Tomoyuki TAMURA ,  Masaki ISHIGURO ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Makoto NAWATA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32577 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

Abstract: A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.

Abstract translation: 等离子体处理装置包括在形成等离子体的处理室中的台，待处理的晶片和布置在台的上部的电极，并且供电以将晶片静电吸引并保持在平台上，并且连续地 一个接一个地处理多个晶片。 存在在不同条件下进行使用等离子体的处理的多个处理步骤，并且在处理步骤之间停止形成等离子体时存在多个时段。 在开始处理任何晶片之前涂覆处理室的内壁，并且在停止等离子体的形成期间的每个时间段期间，根据在处理室中漂浮并带电的颗粒的各自的极性的平衡来改变提供给电极的电压 。

公开(公告)号：US20130098871A1

公开(公告)日：2013-04-25

申请号：US13277072

申请日：2011-10-19

Applicant: Tom Miller ,  Shouyin Zhang

Inventor： Tom Miller ,  Shouyin Zhang

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H01J37/32651 ,  H01J37/08 ,  H01J37/321 ,  H01J37/32504 ,  H01J2237/0206 ,  H01J2237/026 ,  H01J2237/31749

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括在等离子体室内的导电屏蔽，以便减少与等离子体的电容耦合。 通过偏置电极或等离子体将内部导电屏蔽层保持在与等离子体源大致相同的电位。 内部屏蔽允许在等离子体室的外部使用更多种类的冷却方法。

公开(公告)号：US20120125891A1

公开(公告)日：2012-05-24

申请号：US13322192

申请日：2010-05-24

Applicant: Ryuichi Matsuda ,  Kazuto Yoshida ,  Yuichi Kawano

Inventor： Ryuichi Matsuda ,  Kazuto Yoshida ,  Yuichi Kawano

IPC: B44C1/22 ,  H05H1/24 ,  B05C5/02 ,  C23C16/455 ,  B05C5/00

CPC classification number: H01J37/32577 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/32467 ,  H01J37/32504 ,  Y10S156/916

Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

Abstract translation: 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。

公开(公告)号：US20110136346A1

公开(公告)日：2011-06-09

申请号：US12631117

申请日：2009-12-04

Applicant: Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

Inventor： Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC: H01L21/3065 ,  G03F7/42 ,  B08B7/00

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32844 ,  H01J37/32935 ,  H01L21/31138 ,  Y02C20/30 ,  Y02P70/605

Abstract: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

Abstract translation: 用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。 在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。 在其它实施例中，处理室壁构造成在等离子体处理期间被加热。 还公开了非氧化等离子体工艺。

公开(公告)号：US20050236109A1

公开(公告)日：2005-10-27

申请号：US11156477

申请日：2005-06-21

Applicant: Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

Inventor： Toshio Masuda ,  Kazue Takahashi ,  Mitsuru Suehiro ,  Tetsunori Kaji ,  Saburo Kanai

IPC: C23F1/00 ,  H01J37/32

CPC classification number: H01J37/32504 ,  H01J37/32522 ,  H01J2237/022

Abstract: A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

Abstract translation: 等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。 该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制 板的温度达到预定值。 该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。