公开(公告)号：US20100240216A1

公开(公告)日：2010-09-23

申请号：US12789516

申请日：2010-05-28

申请人： Kunihiro TADA ,  Hiroaki Yokoi ,  Satoshi Wakabayashi ,  Kensaku Narushima

发明人： Kunihiro TADA ,  Hiroaki Yokoi ,  Satoshi Wakabayashi ,  Kensaku Narushima

IPC分类号： H01L21/3205

CPC分类号： C23C16/45523 ,  C23C16/4408 ,  C23C16/50 ,  H01L21/28562

摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.

摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。