Microwave-based high-throughput material processing device with concentric rotary chassis

    公开(公告)号:US11445580B2

    公开(公告)日:2022-09-13

    申请号:US16839195

    申请日:2020-04-03

    Abstract: The present invention provides a microwave-based high-throughput material processing device with a concentric rotary chassis. The device includes a microwave source generator, a microwave reaction chamber, and a temperature acquisition device. The microwave reaction chamber is provided with a rotary table, a thermal insulation barrel and a crucible die. The thermal insulation barrel is disposed on the rotary table, and the crucible die is disposed in the thermal insulation barrel. The crucible die is provided with a plurality of first grooves, and the first grooves are evenly distributed on a first circumference. A plurality of first fixing holes are disposed on a top of the thermal insulation barrel, and the first fixing holes are disposed corresponding to the first grooves. A first acquisition hole is disposed on the top of the microwave reaction chamber, and the first acquisition hole is located right above the first circumference.

    Microwave-Based High-Throughput Material Processing Device with Concentric Rotary Chassis

    公开(公告)号:US20200323051A1

    公开(公告)日:2020-10-08

    申请号:US16839195

    申请日:2020-04-03

    Abstract: The present invention provides a microwave-based high-throughput material processing device with a concentric rotary chassis. The device includes a microwave source generator, a microwave reaction chamber, and a temperature acquisition device. The microwave reaction chamber is provided with a rotary table, a thermal insulation barrel and a crucible die. The thermal insulation barrel is disposed on the rotary table, and the crucible die is disposed in the thermal insulation barrel. The crucible die is provided with a plurality of first grooves, and the first grooves are evenly distributed on a first circumference. A plurality of first fixing holes are disposed on a top of the thermal insulation barrel, and the first fixing holes are disposed corresponding to the first grooves. A first acquisition hole is disposed on the top of the microwave reaction chamber, and the first acquisition hole is located right above the first circumference.

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