公开(公告)号：US08203135B2

公开(公告)日：2012-06-19

申请号：US12697620

申请日：2010-02-01

申请人： Kyu-Rie Sim ,  Jung-Hoon Park ,  Yoon-Jong Song ,  Jae-Min Shin ,  Shin-Hee Han

发明人： Kyu-Rie Sim ,  Jung-Hoon Park ,  Yoon-Jong Song ,  Jae-Min Shin ,  Shin-Hee Han

IPC分类号： H01L29/41

CPC分类号： H01L27/24 ,  H01L27/222

摘要： A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another. The semiconductor device further includes a plurality of electrode patterns conformably formed on the inside of the sidewall patterns and having size errors less than 10%, and a plurality of filling patterns formed inside the electrode patterns and completely filling the inside of the contact holes.

摘要翻译： 提供半导体器件，半导体模块，电子设备及其制造和制造方法。 半导体器件包括形成在衬底上的下互连，形成在下互连上的多个控制图案，形成在控制图案上的多个下接触插塞图案，形成在下接触插塞图案上的多个存储图案， 形成在存储图案上的多个上电极和形成在上电极上的多个上互连。 下接触插头图案各自包括具有不同尺寸的至少两个接触孔，多个侧壁图案形成在两个接触孔的内侧壁上，并且其中侧壁图案具有彼此不同的厚度。 半导体器件还包括多个沿着侧壁图案的内侧形成并且具有小于10％的尺寸误差的电极图案，以及形成在电极图案内并且完全填充接触孔内部的多个填充图案。