公开(公告)号：US06353318B1

公开(公告)日：2002-03-05

申请号：US09523587

申请日：2000-03-10

申请人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

发明人： Kyusik Sin ,  Yingjian Chen ,  Ningja Zhu ,  Bill Crue

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.

摘要翻译： 本发明的装置体现在具有磁阻元件的磁场传感器，用于利用磁场偏置磁阻元件的磁偏置层和位于磁偏置层和磁阻元件之间的电绝缘体。 绝缘体防止磁阻元件和磁偏置层之间的电流的流动，并且绝缘体的至少一部分允许磁场从磁偏置层通过到磁阻元件，使得磁阻元件被偏置。 本发明的方法体现在一种用于制造磁场传感器的方法，该磁场传感器具有以下步骤：形成磁阻元件，在主阻抗元件的至少一部分上形成具有主部分和端部的下绝缘体，形成 在所述下绝缘体的主部分上方形成磁偏置层，并且在所述磁偏置层上方并在所述下绝缘体的所述端部上方形成上绝缘体，使得所述磁偏置层与所述磁阻元件电绝缘。