公开(公告)号：US10669160B2

公开(公告)日：2020-06-02

申请号：US15966799

申请日：2018-04-30

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Feng Li ,  Zhiwen Wan ,  Claudia Fafard ,  Stefan Wiese ,  Guillaume Husson ,  Grigory Nikiforov ,  Bin Sui ,  Jean-Marc Girard

IPC分类号： C01G41/04

摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

公开(公告)号：US11821080B2

公开(公告)日：2023-11-21

申请号：US17193046

申请日：2021-03-05

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Rocio Alejandra Arteaga Muller ,  Nicolas Blasco ,  Jean-Marc Girard ,  Feng Li ,  Venkateswara R. Pallem ,  Zhengning Gao

IPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/34 ,  C23C16/06 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02172

摘要： A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

公开(公告)号：US11577967B2

公开(公告)日：2023-02-14

申请号：US17123445

申请日：2020-12-16

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04

摘要： A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

公开(公告)号：US11066310B2

公开(公告)日：2021-07-20

申请号：US16897915

申请日：2020-06-10

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04 ,  C30B35/00 ,  C30B33/02

摘要： Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

公开(公告)号：US10899630B2

公开(公告)日：2021-01-26

申请号：US16144000

申请日：2018-09-27

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04

摘要： A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

公开(公告)号：US10710896B2

公开(公告)日：2020-07-14

申请号：US15966924

申请日：2018-04-30

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

发明人： Feng Li ,  Sonia Plaza ,  Jean-Marc Girard ,  Nicolas Blasco ,  Yumin Liu

IPC分类号： C01G41/04 ,  C30B33/02 ,  C30B35/00

摘要： Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.