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1.发明授权公开(公告)号：US10669160B2
公开(公告)日：2020-06-02
申请号：US15966799
申请日：2018-04-30
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Yumin Liu , Feng Li , Zhiwen Wan , Claudia Fafard , Stefan Wiese , Guillaume Husson , Grigory Nikiforov , Bin Sui , Jean-Marc Girard
IPC分类号： C01G41/04
摘要： Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.
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公开(公告)号：US11739220B2
公开(公告)日：2023-08-29
申请号：US16971869
申请日：2019-02-21
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Antonio Sanchez , Gennadiy Itov , Manish Khandelwal , Cole Ritter , Peng Zhang , Jean-Marc Girard , Zhiwen Wan , Glenn Kuchenbeiser , David Orban , Sean Kerrigan , Reno Pesaresi , Matthew Damien Stephens , Yang Wang , Guillaume Husson , Grigory Nikiforov
IPC分类号： C09D1/00 , C09D7/63 , B05D1/00 , B05D3/02 , C01B21/068 , C01B21/087 , C01B33/12 , C23C18/12
CPC分类号： C09D1/00 , B05D1/005 , B05D3/0254 , C01B21/068 , C01B21/087 , C01B33/126 , C09D7/63 , C23C18/1204 , C23C18/1208 , C23C18/1279
摘要： A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
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公开(公告)号：US11377359B2
公开(公告)日：2022-07-05
申请号：US16827186
申请日：2020-03-23
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
IPC分类号： C01B33/04 , C08G77/60 , B01J31/14 , B01J23/04 , B01J23/02 , B01J31/02 , B01J31/12 , B01J27/128 , C09D183/16 , C08G77/12
摘要： Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
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公开(公告)号：US11097953B2
公开(公告)日：2021-08-24
申请号：US16158117
申请日：2018-10-11
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
摘要： Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
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公开(公告)号：US10752507B2
公开(公告)日：2020-08-25
申请号：US16158089
申请日：2018-10-11
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人： Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
摘要： Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
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公开(公告)号：US11230474B2
公开(公告)日：2022-01-25
申请号：US16409133
申请日：2019-05-10
发明人： Gennadiy Itov , Jian Hou , Grigory Nikiforov
摘要： Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by pyrolysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature, residence time, and the relative amount of starting compounds. The disclosed synthesis methods allow facile preparation of n-tetrasilane.
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7.发明授权公开(公告)号：US10584039B2
公开(公告)日：2020-03-10
申请号：US15827783
申请日：2017-11-30
IPC分类号： C23C16/08 , C23C16/30 , C01G23/02 , C23C16/40 , C23C16/34 , H01L21/768 , H01L21/02 , C23C16/448 , C23C16/455 , C07F11/00 , G01N25/48 , G01R33/46 , C01B7/13
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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8.发明申请GROUP 8-CONTAINING FILM FORMING COMPOSITIONS, THEIR SYNTHESIS, AND USE IN FILM DEPOSITION 有权第8组含膜的成膜组合物，其合成及其在膜沉积中的应用公开(公告)号：US20160115586A1
公开(公告)日：2016-04-28
申请号：US14986334
申请日：2015-12-31
发明人： Grigory Nikiforov , Satoko Gatineau
摘要： Group 8-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The Group 8-containing film forming compositions comprise silylamide-containing precursors, particularly {Fe[N(SiMe3)2]2}2.
摘要翻译： 公开了含有8族成膜组合物，它们的制备及其用于气相沉积膜的用途。 含有8族成膜组合物包含含甲酰胺的前体，特别是{Fe [N（SiMe 3）2] 2} 2。
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公开(公告)号：US11673904B1
公开(公告)日：2023-06-13
申请号：US17546169
申请日：2021-12-09
发明人： Grigory Nikiforov , Nicolas Blasco
IPC分类号： C07F15/00
CPC分类号： C07F15/0093
摘要： A method for synthesizing Pt(PF3)4 (CAS # 19529-53-4) comprises dissolving a platinum compound having a general formula, Pt(Hal)2(PF3)x, in an anhydrous solvent forming a Pt(Hal)2(PF3)x solution, wherein Hal=F, Cl, Br or I, x=1, 2, adding a metal powder and excess amount of PF3 into the Pt(Hal)2(PF3)x solution, and forming Pt(PF3)4 through a reaction between Pt(Hal)2(PF3)x, PF3 and the metal powder under a reaction condition. The method further comprises synthesizing Pt(Hal)2(PF3)xthrough the steps of dispersing a platinum precursor having a general formula, Pt(Hal)2, into the anhydrous solvent forming a suspension of Pt(Hal)2, wherein Hal=F, Cl, Br or I, introducing PF3 into the suspension of Pt(Hal)2, and forming the solution of the platinum compound Pt(Hal)2(PF3)xin the anhydrous solvent through a reaction of PF3 and Pt(Hal)2.
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10.发明授权公开(公告)号：US10689405B2
公开(公告)日：2020-06-23
申请号：US15968099
申请日：2018-05-01
IPC分类号： C01G23/02 , C07F7/28 , C23C16/455 , C23C16/14 , C23C16/34
摘要： Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.
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