公开(公告)号：US20160036000A1

公开(公告)日：2016-02-04

申请号：US14811191

申请日：2015-07-28

Applicant: LG Display Co., Ltd.

Inventor： Wonyeol Choi ,  ByoungChul Kim ,  MyoungSoo Lee ,  Heesung Park

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5253 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display includes: a substrate on which an organic light-emitting element is formed; an organic light-emitting element on a substrate; a first inorganic layer on the organic light-emitting element and made substantially of hydrogenated silicon nitride (SiNx:H); an organic layer on a portion of the first inorganic layer; and a second inorganic layer on and completely covering the organic layer. Edges of the second inorganic layer come in contact with the first inorganic layer. A ratio of a number of oxygen atoms to silicon atoms contained in the first inorganic layer ranges from 0.12 to 0.19, and a ratio of a number of nitrogen atoms to silicon atoms contained in the first inorganic layer ranges from 0.9 to 1.5. The first inorganic layer and the second inorganic layer have substantially the same composition.

Abstract translation: 有机发光二极管（OLED）显示器包括：形成有机发光元件的基板; 基板上的有机发光元件; 有机发光元件上的第一无机层，基本由氢化氮化硅（SiNx：H）制成。 在所述第一无机层的一部分上的有机层; 以及在有机层上并完全覆盖有机层的第二无机层。 第二无机层的边缘与第一无机层接触。 第一无机层中含有的氧原子数与硅原子数的比例为0.12〜0.19，第一无机层中含有的氮原子数与硅原子数的比例为0.9〜1.5。 第一无机层和第二无机层具有基本上相同的组成。

公开(公告)号：US11641756B2

公开(公告)日：2023-05-02

申请号：US17330938

申请日：2021-05-26

Applicant: LG DISPLAY CO., LTD.

Inventor： GyuHyeong Han ,  Heechul Lim ,  ByoungChul Kim ,  Heesung Park

IPC: H10K50/842 ,  H01L27/12

Abstract: A display device and a method for manufacturing the same are disclosed, in which a cathode electrode is not separated from an organic light emitting layer. The method includes forming pixels on a display area on a first substrate, forming an encapsulation film to cover the display area, attaching a protective film onto the encapsulation film, and removing the protective film. The protective film includes a substrate layer and an adhesive layer formed at an edge area of at least one side of the substrate layer.

公开(公告)号：US11050038B2

公开(公告)日：2021-06-29

申请号：US15824681

申请日：2017-11-28

Applicant: LG DISPLAY CO., LTD.

Inventor： GyuHyeong Han ,  Heechul Lim ,  ByoungChul Kim ,  Heesung Park

IPC: H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L51/56

Abstract: A display device and a method for manufacturing the same are disclosed, in which a cathode electrode is not separated from an organic light emitting layer. The method for manufacturing a display device comprises the steps of forming pixels on a display area on a first substrate, forming an encapsulation film to cover the display area, attaching a protective film onto the encapsulation film, and removing the protective film. When attaching the protective film, the protective film includes a substrate layer and an adhesive layer formed at an edge area of at least one side of the substrate layer.

公开(公告)号：US09685630B2

公开(公告)日：2017-06-20

申请号：US14811191

申请日：2015-07-28

Applicant: LG Display Co., Ltd.

Inventor： Wonyeol Choi ,  ByoungChul Kim ,  MyoungSoo Lee ,  Heesung Park

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/5253 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display includes: a substrate on which an organic light-emitting element is formed; an organic light-emitting element on a substrate; a first inorganic layer on the organic light-emitting element and made substantially of hydrogenated silicon nitride (SiNx:H); an organic layer on a portion of the first inorganic layer; and a second inorganic layer on and completely covering the organic layer. Edges of the second inorganic layer come in contact with the first inorganic layer. A ratio of a number of oxygen atoms to silicon atoms contained in the first inorganic layer ranges from 0.12 to 0.19, and a ratio of a number of nitrogen atoms to silicon atoms contained in the first inorganic layer ranges from 0.9 to 1.5. The first inorganic layer and the second inorganic layer have substantially the same composition.