-
公开(公告)号:US20180286891A1
公开(公告)日:2018-10-04
申请号:US15755458
申请日:2016-05-20
Applicant: LG DISPLAY CO., LTD.
Inventor: SangGul LEE , SangHee YU , GwangTae KIM , YeonTaek YOO , NamSu KIM , SukHo CHO , Hoon CHOI , HyunJin SHIN , HwaChun LIM
IPC: H01L27/12 , G02F1/1368 , G02F1/1333 , G02F1/1343
Abstract: In an exemplary embodiment of the present disclosure, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel area of a substrate includes a first insulating layer that insulates the gate electrode from the source electrode and the drain electrode, and a second insulating layer that covers the source electrode and the drain electrode. According to an exemplary embodiment of the present disclosure, the first insulating layer and the second insulating layer are configured so as not to be extended to a pixel area of the substrate in order to reduce possible oscillation of transmittance depending on a viewing angle which occurs when a specific light of a light source passes through the pixel area.