Thin film transistor and display device using the same
    1.
    发明授权
    Thin film transistor and display device using the same 有权
    薄膜晶体管和使用其的显示装置

    公开(公告)号:US09478612B2

    公开(公告)日:2016-10-25

    申请号:US14815463

    申请日:2015-07-31

    Abstract: A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and a drain region is covered with an etch stopper layer, and the etch stopper layer is partially covered by the first electrode and the second electrode of the oxide thin film transistor. The length in which the etch stopper layer is overlapped by the second electrode is greater than the length in which the etch stopper layer is overlapped by the first electrode to suppress threshold voltage shift in the oxide thin film transistor.

    Abstract translation: 公开了一种包括氧化物薄膜晶体管的显示面板。 在氧化物薄膜晶体管中,源极区域和漏极区域之间的有源层的一部分被蚀刻停止层覆盖,并且蚀刻停止层被氧化物薄膜的第一电极和第二电极部分覆盖 晶体管。 蚀刻停止层与第二电极重叠的长度大于蚀刻停止层与第一电极重叠以抑制氧化物薄膜晶体管中的阈值电压偏移的长度。

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