公开(公告)号：US10256429B2

公开(公告)日：2019-04-09

申请号：US15859017

申请日：2017-12-29

Applicant: LG DISPLAY CO., LTD.

Inventor： In-Sang Jung ,  Kum-Mi Oh ,  Won-Sang Ryu ,  Sun-Wook Ko

IPC: H01L27/32 ,  H01L51/52 ,  G09G3/3225 ,  H01L29/786

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.