公开(公告)号：US11908951B2

公开(公告)日：2024-02-20

申请号：US17562641

申请日：2021-12-27

Applicant: LG DISPLAY CO., LTD.

Inventor： Kum-Mi Oh

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78672 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78633

Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

公开(公告)号：US12130976B2

公开(公告)日：2024-10-29

申请号：US18414435

申请日：2024-01-16

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Jin-Wuk Kim ,  Sung-Hee Kim

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G06F3/041 ,  G06F3/044 ,  G06F3/047 ,  H01L27/12 ,  G02F1/1368

CPC classification number: G06F3/0412 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/136204 ,  G06F3/0445 ,  G06F3/0446 ,  G06F3/047 ,  H01L27/124 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/134318 ,  G02F1/134372 ,  G02F1/136295 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/22

Abstract: A display device includes a first substrate; a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate; a third electrode on an outer side of the first substrate or the second substrate, the third electrode including an organic material and a carbon nano-tube; a plurality of first conductive lines extending along a first direction; a plurality of second conductive lines extending along the first direction; a plurality of third conductive lines extending along a second direction; and a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. A sheet resistance of the third electrode may be greater than a sheet resistance of each of the plurality of first electrodes and a sheet resistance of each of the plurality of second electrodes.

公开(公告)号：US08927993B2

公开(公告)日：2015-01-06

申请号：US13895677

申请日：2013-05-16

Applicant: LG Display Co., Ltd.

Inventor： Young-Ki Jung ,  Seok-Woo Lee ,  Kum-Mi Oh ,  Dong-Cheon Shin ,  In-Hyuk Song ,  Han-Seok Lee ,  Won-Keun Park

IPC: H01L29/10 ,  H01L27/14 ,  H01L27/088 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: H01L27/088 ,  G02F2001/134372 ,  G02F2001/136236 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78633

Abstract: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer on a second passivation layer and having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer and having second and third thicknesses, respectively, the second thickness greater than the third thickness; etching the auxiliary insulating layer, the second passivation layer and a first passivation layer to form a drain contact hole; performing an ashing to remove the second photoresist pattern and expose the auxiliary insulating layer therebelow; performing a dry etching to remove the auxiliary insulating layer not covered by the first photoresist pattern and expose the first passivation layer and to form an insulating pattern below the first photoresist pattern, the insulating pattern and the first photoresist pattern forming an undercut shape; forming a transparent conductive material layer having a fourth thickness less than the first thickness; and performing a lift-off process to remove the first photoresist pattern and the transparent conductive material layer thereon together and form a pixel electrode as a remaining portion of the transparent conductive material layer.

Abstract translation: 一种制造用于边缘场开关模式液晶显示器的阵列基板的方法包括：在第二钝化层上形成具有第一厚度的辅助绝缘层; 在所述辅助绝缘层上形成第一和第二光致抗蚀剂图案，并且分别具有第二和第三厚度，所述第二厚度大于所述第三厚度; 蚀刻辅助绝缘层，第二钝化层和第一钝化层以形成漏极接触孔; 执行灰化以去除第二光致抗蚀剂图案并在其下方露出辅助绝缘层; 执行干蚀刻以去除未被第一光致抗蚀剂图案覆盖的辅助绝缘层，并暴露第一钝化层并在第一光致抗蚀剂图案下方形成绝缘图案，绝缘图案和第一光致抗蚀剂图案形成底切形状; 形成具有小于第一厚度的第四厚度的透明导电材料层; 并且执行剥离处理以将第一光致抗蚀剂图案和透明导电材料层去除在一起，并形成作为透明导电材料层的剩余部分的像素电极。

公开(公告)号：US11907460B2

公开(公告)日：2024-02-20

申请号：US18122092

申请日：2023-03-15

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Jin-Wuk Kim ,  Sung-Hee Kim

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  G02F1/1362 ,  G06F3/047 ,  G02F1/1368

CPC classification number: G06F3/0412 ,  G02F1/13338 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/136204 ,  G06F3/047 ,  G06F3/0445 ,  G06F3/0446 ,  H01L27/124 ,  G02F1/1368 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/134318 ,  G02F1/134372 ,  G02F1/136295 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/22

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

公开(公告)号：US11016594B2

公开(公告)日：2021-05-25

申请号：US16808169

申请日：2020-03-03

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Jin-Wuk Kim ,  Sung-Hee Kim

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  G06F3/047 ,  G02F1/1335

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

公开(公告)号：US10916610B2

公开(公告)日：2021-02-09

申请号：US16711250

申请日：2019-12-11

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3225 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

公开(公告)号：US10529787B2

公开(公告)日：2020-01-07

申请号：US15639743

申请日：2017-06-30

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Shun-Young Yang ,  Min-Seong Yun

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  G09G3/3225

Abstract: Disclosed are a backplane substrate, which is devised to attain circuit characteristics for realizing sufficient gradation even in smaller pixels of a super-high-resolution structure, a manufacturing method for the same, and an organic light-emitting display device using the same, inn the backplane substrate, a driving thin-film transistor has a stack structure different from that of other thin-film transistors so that only the S-factor of the driving thin-film transistor is increased.

公开(公告)号：US10103213B2

公开(公告)日：2018-10-16

申请号：US15247414

申请日：2016-08-25

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

公开(公告)号：US09443886B2

公开(公告)日：2016-09-13

申请号：US14846314

申请日：2015-09-04

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Jung-Il Lee

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78633

Abstract: A thin film transistor substrate according to an embodiment includes a data line and a light barrier film to overlap an active layer of a thin film transistor, wherein the data line and the light barrier film are formed simultaneously, thereby reducing the cost of fabricating the thin film transistor substrate.

Abstract translation: 根据实施例的薄膜晶体管基板包括与薄膜晶体管的有源层重叠的数据线和遮光膜，其中数据线和光阻挡膜同时形成，从而降低了制造薄膜晶体管的成本 薄膜晶体管衬底。

公开(公告)号：US20230200157A1

公开(公告)日：2023-06-22

申请号：US17836925

申请日：2022-06-09

Applicant: LG Display Co., Ltd.

Inventor： Sun-Wook Ko ,  Kum-Mi Oh ,  Deuk-Ho Yeon

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L51/56 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842

Abstract: The present disclosure relates to an organic light emitting display device and a method of fabricating the same. The organic light emitting display device comprises a first substrate including a plurality of sub-pixels; a thin film transistor in each of the plurality of sub-pixels and on the first substrate; an organic light emitting diode in each of the plurality of sub-pixels and on the first substrate; and an aging voltage supply line extending from a lower surface of the first substrate to a portion of the thin film transistor and supplying an aging voltage to the thin film transistor.