公开(公告)号：US20170005152A1

公开(公告)日：2017-01-05

申请号：US15197351

申请日：2016-06-29

Applicant: LG DISPLAY CO., LTD.

Inventor： Sungki HONG ,  Byungyong Ahn ,  Sangkug Han ,  Seungmin Lee ,  Yujin Choi ,  Sunghoon Hong ,  Youngwoon Yoon

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3248 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/3232 ,  H01L27/3237 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78648

Abstract: A thin-film transistor substrate and a display device comprising the same are provided which can improve display quality by reducing or preventing deterioration of the characteristics of thin-film transistors. The thin-film transistor substrate comprises thin-film transistors on a lower protective metal layer. Each thin-film transistor comprises a buffer layer, a semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a source electrode and a drain electrode, and a first electrode. The lower protective metal layer is electrically connected to the gate electrode and overlaps the channel region of the semiconductor layer.

Abstract translation: 提供了一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置，其可以通过减少或防止薄膜晶体管的特性劣化来提高显示质量。 薄膜晶体管衬底包括在下保护金属层上的薄膜晶体管。 每个薄膜晶体管包括缓冲层，半导体层，第一绝缘膜，栅电极，第二绝缘膜，源电极和漏电极以及第一电极。 下保护金属层电连接到栅电极并与半导体层的沟道区重叠。

公开(公告)号：US09748320B2

公开(公告)日：2017-08-29

申请号：US15197351

申请日：2016-06-29

Applicant: LG DISPLAY CO., LTD.

Inventor： Sungki Hong ,  Byungyong Ahn ,  Sangkug Han ,  Seungmin Lee ,  Yujin Choi ,  Sunghoon Hong ,  Youngwoon Yoon

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3248 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/3232 ,  H01L27/3237 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78648

Abstract: A thin-film transistor substrate and a display device comprising the same are provided which can improve display quality by reducing or preventing deterioration of the characteristics of thin-film transistors. The thin-film transistor substrate comprises thin-film transistors on a lower protective metal layer. Each thin-film transistor comprises a buffer layer, a semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a source electrode and a drain electrode, and a first electrode. The lower protective metal layer is electrically connected to the gate electrode and overlaps the channel region of the semiconductor layer.