Abstract:
Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes an active layer and a first gate electrode with a gate insulator therebetween, and a source electrode and a drain electrode respectively disposed at both ends of the active layer. The gate electrode branches as a plurality of lines and overlaps the active layer. The active layer includes one or more channel areas between the source electrode and the drain electrode, one or more dummy areas, and a plurality of link areas between the one or more channel areas to connect the one or more channel areas in one pattern. A length of each of the one or more dummy areas extends from an edge of a corresponding channel area.
Abstract:
An electronic display panel comprising a plastic substrate; a bottom shield metal (BSM) on the plastic substrate; a thin-film transistor (TFT) on the BSM, the TFT and the BSM at least partially overlapping each other; and an active buffer layer between the TFT and the BSM, wherein the BSM is connected to one of a gate electrode, a source electrode, and a drain electrode of the TFT. A bottom shield metal (BSM) on the plastic substrate, the BSM located to minimize formation of a back channel in a pixel circuit by trapped charges of the plastic substrate, the pixel circuit in a pixel area defined by a gate line and a data line on the plastic substrate, the pixel circuit on the active buffer layer including a plurality of TFTs and a plurality of component interconnecting nodes.