公开(公告)号：US10692975B2

公开(公告)日：2020-06-23

申请号：US16210934

申请日：2018-12-05

申请人： LG DISPLAY CO., LTD.

发明人： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC分类号： H01L29/10 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

摘要： A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US10192957B2

公开(公告)日：2019-01-29

申请号：US15531952

申请日：2015-12-16

申请人： LG DISPLAY CO., LTD.

发明人： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

摘要： a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US20190123142A1

公开(公告)日：2019-04-25

申请号：US16210934

申请日：2018-12-05

申请人： LG DISPLAY CO., LTD.

发明人： Juheyuck BAECK ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L29/49

CPC分类号： H01L29/1054 ,  H01L27/1225 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

摘要： a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.