公开(公告)号：US20230217722A1

公开(公告)日：2023-07-06

申请号：US17977956

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： AhnKi Kim

IPC: H01L27/32

CPC classification number: H01L27/3246 ,  H01L27/3223 ,  H01L27/322

Abstract: An electroluminescence display is discloses that has enhanced display quality by reducing reflection of external light. An electroluminescence display comprises: a pixel defined on a substrate; a first electrode disposed at the pixel; a trench at least partially surrounding the pixel; a first metal layer on a bottom surface in the trench; a bank on an outer periphery of the first electrode and on the first metal layer in the trench; a second metal layer on the bank that is in the trench; an emission layer on the first electrode, the bank, and the second metal layer; and a second electrode on the emission layer.

公开(公告)号：US20240049517A1

公开(公告)日：2024-02-08

申请号：US18365151

申请日：2023-08-03

Applicant: LG Display Co., Ltd.

Inventor： AhnKi Kim

IPC: H10K59/122 ,  H10K59/80 ,  H10K59/38 ,  H10K59/131 ,  H10K59/124

CPC classification number: H10K59/122 ,  H10K59/873 ,  H10K59/38 ,  H10K59/131 ,  H10K59/124 ,  H10K59/878

Abstract: A light emitting display device according to the present disclosure comprises: a first pixel and a second pixel disposed on a substrate; a first electrode disposed in each of the first pixel and the second pixel; a trench disposed between the first pixel and the second pixel; a bank disposed at circumferences of the first pixel and inside of the trench; and an emission layer on the first electrode and an upper surface of the bank.

公开(公告)号：US20230217697A1

公开(公告)日：2023-07-06

申请号：US18070997

申请日：2022-11-29

Applicant: LG Display Co., Ltd.

Inventor： TaeHan Park ,  Saehoon Oh ,  AhnKi Kim

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5281 ,  H01L27/3272

Abstract: A thin film transistor array substrate comprises a substrate, a light shielding layer provided on the substrate, and a thin film transistor provided overlapped by the light shielding layer, wherein the thin film transistor includes a semiconductor layer on the light shielding layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, and a source electrode connected to a first side of the semiconductor layer and a drain electrode connected to a second side of the semiconductor layer, wherein at least one of the light shielding layer, the gate electrode, the source electrode, and the drain electrode includes a first quantum-dot layer.